Assignment of Assignor's Interest

Recorded: 2013-10-31 Pages: 6

Assignors

TSUCHIYA, TADAYOSHI

Executed: 2013-10-29

KANEDA, NAOKI

Executed: 2013-10-29

MISHIMA, TOMOYOSHI

Executed: 2013-10-29

Assignee

HITACHI METALS, LTD.

2-1, SHIBAURA 1-CHOME MINATO-KU, TOKYO, 105-8614, JAPAN

Covered Property (1)

Nitride Semiconductor Device

Application: 14/068,067 →

Publication: US 2014/0191369

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.