Patent Assignment
Reel/Frame 031675/0632
Assignment of Assignor's Interest
Recorded: 2013-11-26
Pages: 3
Assignor
ITO, SHIGETOSHI
Executed: 2013-10-31
Assignee
SHARP KABUSHIKI KAISHA
22-22, NAGAIKE-CHO, ABENO-KU, OSAKA-SHI, OSAKA, 545-8522, JAPAN
Covered Property
(1)
Method of Producing a Nitride Semiconductor Crystal with Precursor Containing Carbon and Oxygen, and Nitride Semiconductor Crystal and Semiconductor Device Made by the Method
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.