Patent Assignment
Reel/Frame 032251/0069
CHANGE OF NAME
Recorded: 2014-02-12
Received: 2014-02-12
Pages: 7
Assignor
OCLARO SWITZERLAND GMBH
Executed: 2013-10-08
Assignee
II-VI LASER ENTERPRISE GMBH
BINZSTRASSE 17, CH-8045, ZURICH, CHX, SWITZERLAND
Covered Applications
(41)
SPATIAL BEAM COMBINING FOR MULTIPLE DIODE LASER ELEMENTS
App. No. 13/787,546
→
OPTICAL AMPLIFIERS
App. No. 13/697,776
→
SYSTEM FOR SELECTING A PROXY PAIR BASED ON CONFIGURATIONS OF AUTODISCOVERED PROXIES ON A NETWORK
App. No. 13/744,364
→
SEMICONDUCTOR LASER DIODES
App. No. 13/639,833
→
HOMOGENIZATION OF FAR FIELD FIBER COUPLED RADIATION
App. No. 13/522,692
→
Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device
App. No. 13/592,728
→
VCSEL WITH NON-CIRCULAR MESA AND CURRENT CONFINEMENT APERTURE FOR HIGHER-ORDER LATERAL MODE EMISSION
App. No. 13/121,885
→
HIGH RELIABILITY LASER EMITTER MODULES
App. No. 13/004,679
→
LASER SYSTEM WITH HIGHLY LINEAR OUTPUT
App. No. 12/993,617
→
HIGH POWER SEMICONDUCTOR LASER DIODES
App. No. 12/873,382
→
HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE
App. No. 11/993,247
→
HIGH POWER SEMICONDUCTOR LASER DIODE
App. No. 11/993,304
→
HIGH POWER TOP EMITTING VERTICAL CAVITY SURFACE EMITTING LASER
App. No. 12/587,753
→
STABILIZED LASER SOURCE WITH VERY HIGH RELATIVE FEEDBACK AND NARROW BANDWIDTH
App. No. 12/496,919
→
LASER EMITTER MODULES AND METHODS OF ASSEMBLY
App. No. 12/337,275
→
LASER LIGHT SOURCE AND METHOD OF OPERATING THE SAME
App. No. 12/248,984
→
HIGH POWER SEMICONDUCTOR LASER DIODE
App. No. 12/094,316
→
OPTOELECTRONIC DEVICE AND METHOD OF OPERATING OPTOELECTRONIC DEVICE
App. No. 12/059,111
→
Fermented Appetence Factors Without Animal Proteins for Animals
App. No. 11/990,215
→
A HIGH POWER SEMICONDUCTOR LASER DIODE
App. No. 11/972,156
→
APPARATUS AND METHOD OF COUPLING A FIBER OPTIC DEVICE TO A LASER
App. No. 11/973,207
→
COUPLING DEVICES AND METHODS FOR STACKED LASER EMITTER ARRAYS
App. No. 11/761,901
→
MULTIPLE EMITTER COUPLING DEVICES AND METHODS WITH BEAM TRANSFORM SYSTEM
App. No. 11/747,172
→
HIGH POWER SEMICONDUCTOR LASER DIODE
App. No. 10/890,714
→
LASER SOURCE WITH HIGH RELATIVE FEEDBACK AND METHOD FOR MAKING SUCH A LASER SOURCE
App. No. 10/775,302
→
ANTI-REFLECTION COATINGS FOR SEMICONDUCTOR LASERS
App. No. 10/735,375
→
STEPPED MANIFOLD ARRAY OF MICROCHANNEL HEAT SINKS
App. No. 10/666,999
→
CLEAVING LASER DIODE BARS HAVING GRATINGS
App. No. 10/458,469
→
HIGH SPEED VERTICAL CAVITY SURFACE EMITTING LASER DEVICE (VCSEL) WITH LOW PARASITIC CAPACITANCE
App. No. 10/422,397
→
LOW INDIUM CONTENT QUANTUM WELL STRUCTURES
App. No. 10/410,835
→
HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
App. No. 10/245,199
→
INDIUM PHOSPHIDE-BASED VERTICAL-CAVITY SURFACE-EMITTING LASER
App. No. 10/244,343
→
PUMP LASER DIODE WITH IMPROVED WAVELENGTH STABILITY
App. No. 10/242,497
→
FIBER BUNDLE ALIGNMENT
App. No. 10/207,369
→
RELIABLE DIODE LASER STACK
App. No. 10/152,956
→
STABILIZED LASER SOURCE
App. No. 10/049,886
→
SEMICONDUCTOR LASER
App. No. 10/141,914
→
HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
App. No. 10/131,335
→
DIODE BEAM TRANSFORMATION
App. No. 09/967,751
→
HIGH POWER SEMICONDUCTOR LASER DIODE
App. No. 09/852,994
→
INCREASING THE YIELD OF PRECISE WAVELENGTH LASERS
App. No. 09/848,529
→