Assignment of Assignor's Interest

Recorded: 2014-02-27 Pages: 3

Assignor

KAGA, YOUICHIROU

Executed: 2014-02-13

Assignee

HITACHI METALS, LTD.

2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 1058614, JAPAN

Covered Property (1)

Silicon Nitride Substrate and Method for Producing Silicon Nitride Substrate

Patent: 9,655,237 →

Application: 14/241,789 →

Publication: US 2014/0220302

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.