Assignment of Assignor's Interest

Recorded: 2014-09-09 Pages: 3

Assignor

KANEDA, NAOKI

Executed: 2014-09-05

Assignee

HITACHI METALS, LTD.

2-1, SHIBAURA 1-CHOME MINATO-KU,, TOKYO, 105-8614, JAPAN

Covered Property (1)

High Voltage Gallium Nitride Based Semiconductor Device and Manufacturing Method of the Same

Patent: 9,184,244 →

Application: 14/481,123 →

Publication: US 2015/0243736

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.