IP Library Assignment 035827/0154
Patent Assignment
Reel/Frame 035827/0154

Assignment of Assignor's Interest

Recorded: 2015-06-12 Pages: 3
Assignors
JUNG, DAE-SUB
Executed: 2015-06-10
CAO, GUOHAO
Executed: 2015-06-10
Assignee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANGJIANG ROAD, PUDONG NEW AREA, SHANGHAI, 201203, CHINA
Covered Property (1)
Lateral Double-Diffused Mosfet and Fabrication Method Thereof
Patent: 9,536,742 →
Application: 14/737,692 →
Publication: US 2015/0364598