Patent Assignment
Reel/Frame 036033/0231
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2015-06-29
Received: 2015-06-29
Pages: 152
Assignor
SPANSION, LLC
Executed: 2015-06-01
Assignee
CYPRESS SEMICONDUCTOR CORPORATION
198 CHAMPION COURT, SAN JOSE, CA, 95134, UNITED STATES
Covered Applications
(10)
NITRIDE BARRIER LAYER FOR PROTECTION OF ONO STRUCTURE FROM TOP OXIDE LOSS IN A FABRICATION OF SONOS FLASH MEMORY
App. No. 09/966,702
→
CURRENT PULSE RECEIVING CIRCUIT
App. No. 09/922,764
→
METHOD OF PROGRAMMING A NON-VOLATILE MEMORY CELL USING A SUBSTRATE BIAS
App. No. 09/884,409
→
METHOD OF DRAIN AVALANCHE PROGRAMMING OF A NON-VOLATILE MEMORY CELL
App. No. 09/884,402
→
LOW COLUMN LEAKAGE NOR FLASH ARRAY-DOUBLE CELL IMPLEMENTATION
App. No. 09/884,565
→
SEMICONDUCTOR DEVICE HAVING GATE EDGES PROTECTED FROM CHARGE GAIN/LOSS
App. No. 09/834,419
→
HIGHER PROGRAM VT AND FASTER PROGRAMMING RATES BASED ON IMPROVED ERASE METHODS
App. No. 09/796,282
→
TAILORED ERASE METHOD USING HIGHER PROGRAM VT AND HIGHER NEGATIVE GATE ERASE
App. No. 09/795,854
→
FLASH MEMORY ERASE SPEED BY FLUORINE IMPLANT OR FLUORINATION
App. No. 09/772,600
→
ADAPTIVE REFERENCE CELLS FOR A MEMORY DEVICE
App. No. 09/764,965
→