IP Library Assignment 037671/0590
Patent Assignment
Reel/Frame 037671/0590

Assignment of Assignor's Interest

Recorded: 2016-02-05 Pages: 11
Assignors
NAGAO, SATORU
Executed: 2015-12-12
TSUKADA, YUSUKE
Executed: 2015-12-08
KAMADA, KAZUNORI
Executed: 2015-12-08
KUBO, SHUICHI
Executed: 2015-12-08
IKEDA, HIROTAKA
Executed: 2015-12-08
FUJITO, KENJI
Executed: 2015-12-08
FUJISAWA, HIDEO
Executed: 2015-12-08
MIKAWA, YUTAKA
Executed: 2015-12-07
MOCHIZUKI, TAE
Executed: 2015-12-09
Assignee
MITSUBISHI CHEMICAL CORPORATION
1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, 100-8251, JAPAN
Covered Property (1)
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Application: 15/016,409 →
Publication: US 2016/0233306
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Merger and Change of Name Jul 7, 2017
From: MITSUBISHI CHEMICAL CORPORATION; MITSUBISHI RAYON CO., LTD.
To: MITSUBISHI CHEMICAL CORPORATION
Reel/Frame 043109/0864 →