IP Library › Assignment 040186/0212
Patent Assignment
Reel/Frame 040186/0212

ASSIGNMENT OF ASSIGNOR'S INTEREST

Recorded: 2016-11-01 Received: 2016-11-01 Pages: 15
Assignor
Assignee
SORAA INC.
6500 KAISER DRIVE, FREMONT, CA, 94555, UNITED STATES
Covered Applications (39)
CRYSTALLINE GALLIUM NITRIDE CONTAINING FLOURINE
App. No. 15/061,069
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APPARATUS FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES
App. No. 13/812,757
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APPARATUS FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES
App. No. 61/368,443
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METHOD FOR FORMING NITRIDE CRYSTALS
App. No. 11/973,182
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CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD
App. No. 11/621,556
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CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE
App. No. 11/621,560
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GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/559,146
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Method of making a gallium nitride crystalline composition having a low dislocation density
App. No. 11/558,048
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GALLIUM NITRIDE CRYSTAL AND METHOD OF MAKING SAME
App. No. 11/588,181
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METHOD FOR FORMING NITRIDE CRYSTALS
App. No. 60/828,646
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SUBSTRATE SUPPORT HAVING BRAZED PLATES AND RESISTANCE HEATER
App. No. 11/506,460
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Crystalline composition, wafer, and semi-conductor structure
App. No. 11/376,640
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Crystalline composition, wafer, and semi-conductor structure
App. No. 11/376,575
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METHOD FOR MAKING CRYSTALLINE COMPOSITION
App. No. 11/313,528
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APPARATUS FOR MAKING CRYSTALLINE COMPOSITION
App. No. 11/313,442
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CRYSTALLINE COMPOSITION, DEVICE, AND ASSOCIATED METHOD
App. No. 11/313,451
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METHOD FOR REDUCING DEFECT CONCENTRATION IN CRYSTALS
App. No. 11/300,660
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RESONANT CAVITY LIGHT EMITTING DEVICES AND ASSOCIATED METHOD
App. No. 11/295,627
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Single crystal and quasi-single crystal, composition, apparatus, and associated method
App. No. 11/249,872
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APPARATUS FOR PRODUCING SINGLE CRYSTAL AND QUASI-SINGLE CRYSTAL, AND ASSOCIATED METHOD
App. No. 11/249,896
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ETCHANT, METHOD OF ETCHING, LAMINATE FORMED THEREBY, AND DEVICE
App. No. 11/167,719
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APPARATUS FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS AND METHODS THEREOF
App. No. 11/042,858
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GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/010,507
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HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 11/010,139
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HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 10/932,127
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HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/831,865
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LIGHT-BASED SYSTEM FOR DETECTING ANALYTES
App. No. 10/746,292
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HIGH PRESSURE/HIGH TEMPERATURE APPARATUS WITH IMPROVED TEMPERATURE CONTROL FOR CRYSTAL GROWTH
App. No. 10/699,504
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GROUP III-NITRIDE BASED RESONANT CAVITY LIGHT EMITTING DEVICES FABRICATED ON SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATES
App. No. 10/693,803
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HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/440,574
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HOMOEPITAXIAL GALLIUM-NITRIDE-BASED ELECTRONIC DEVICES AND METHOD FOR PRODUCING SAME
App. No. 10/329,982
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GALLIUM NITRIDE CRYSTAL AND METHOD OF MAKING SAME
App. No. 10/329,981
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High pressure/high temperature apparatus with improved temperature control for crystal growth
App. No. 60/435,189
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Method for reducing defect concentrations in crystals
App. No. 60/392,741
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HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES
App. No. 10/063,164
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Pressure vessel
App. No. 09/683,658
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HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 09/683,659
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SINTERED POLYCRYSTALLINE GALLIUM NITRIDE AND ITS PRODUCTION
App. No. 10/001,575
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HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 09/839,941
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