Patent Assignment
Reel/Frame 041201/0911
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2017-02-08
Received: 2017-02-08
Pages: 19
Assignor
GENERAL ELECTRIC COMPANY
Executed: 2016-05-24
Assignee
MOMENTIVE PERFORMANCE MATERIALS INC.
260 HUDSON RIVER ROAD, WATERFORD, NY, 12188, UNITED STATES
Covered Applications
(24)
GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/559,146
→
METHOD FOR FORMING NITRIDE CRYSTALS
App. No. 60/828,646
→
HEATER, APPARATUS, AND ASSOCIATED METHOD
App. No. 11/521,034
→
Crystalline composition, wafer, and semi-conductor structure
App. No. 11/376,640
→
Crystalline composition, wafer, and semi-conductor structure
App. No. 11/376,575
→
RESONANT CAVITY LIGHT EMITTING DEVICES AND ASSOCIATED METHOD
App. No. 11/295,627
→
Single crystal and quasi-single crystal, composition, apparatus, and associated method
App. No. 11/249,872
→
ETCHANT, METHOD OF ETCHING, LAMINATE FORMED THEREBY, AND DEVICE
App. No. 11/167,719
→
GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/010,507
→
HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 11/010,139
→
HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 10/932,127
→
HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/831,865
→
LIGHT-BASED SYSTEM FOR DETECTING ANALYTES
App. No. 10/746,292
→
HIGH PRESSURE/HIGH TEMPERATURE APPARATUS WITH IMPROVED TEMPERATURE CONTROL FOR CRYSTAL GROWTH
App. No. 10/699,504
→
GROUP III-NITRIDE BASED RESONANT CAVITY LIGHT EMITTING DEVICES FABRICATED ON SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATES
App. No. 10/693,803
→
HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/440,574
→
GALLIUM NITRIDE CRYSTAL AND METHOD OF MAKING SAME
App. No. 10/329,981
→
High pressure/high temperature apparatus with improved temperature control for crystal growth
App. No. 60/435,189
→
Method for reducing defect concentrations in crystals
App. No. 60/392,741
→
HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES
App. No. 10/063,164
→
Pressure vessel
App. No. 09/683,658
→
HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 09/683,659
→
SINTERED POLYCRYSTALLINE GALLIUM NITRIDE AND ITS PRODUCTION
App. No. 10/001,575
→
HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 09/839,941
→