Patent Assignment
Reel/Frame 044636/0918
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2017-10-23
Received: 2017-10-23
Pages: 12
Assignor
SORAA, INC.
Executed: 2017-09-08
Assignee
SLT TECHNOLOGIES, INC.
C/O LOEB & LOEB, 10100 SANTA MONICA BLVD., SUITE 2200, LOS ANGELES, CA, 90067, UNITED STATES
Covered Applications
(53)
REUSABLE NITRIDE WAFER, METHOD OF MAKING, AND USE THEREOF
App. No. 15/596,728
→
APPARATUS FOR HIGH PRESSURE REACTION
App. No. 15/474,806
→
POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING
App. No. 15/469,196
→
PRESSURE RELEASE MECHANISM FOR CAPSULE AND METHOD OF USE WITH SUPERCRITICAL FLUIDS
App. No. 15/269,538
→
LARGE AREA, LOW-DEFECT GALLIUM-CONTAINING NITRIDE CRYSTALS, METHOD OF MAKING, AND METHOD OF USE
App. No. 15/226,552
→
METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE
App. No. 15/011,266
→
METHOD FOR SYNTHESIS OF HIGH QUALITY LARGE AREA BULK GALLIUM BASED CRYSTALS
App. No. 14/930,170
→
REUSABLE NITRIDE WAFER, METHOD OF MAKING, AND USE THEREOF
App. No. 14/805,278
→
APPARATUS FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES
App. No. 13/812,757
→
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES
App. No. 14/599,335
→
TRANSPARENT GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
App. No. 14/485,516
→
LARGE AREA SEED CRYSTAL FOR AMMONOTHERMAL CRYSTAL GROWTH AND METHOD OF MAKING
App. No. 14/249,708
→
HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, METHODS OF MAKING, AND METHODS OF USE
App. No. 14/089,281
→
ULTRAPURE MINERALIZERS AND METHODS FOR NITRIDE CRYSTAL GROWTH
App. No. 14/033,107
→
METHOD FOR QUANTIFICATION OF EXTENDED DEFECTS IN GALLIUM-CONTAINING NITRIDE CRYSTALS
App. No. 14/013,753
→
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES
App. No. 13/908,836
→
POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING
App. No. 13/894,220
→
Capsule For High Pressure, High Temperature Processing Of Materials And Methods Of Use
App. No. 13/657,551
→
APPARATUS FOR LARGE VOLUME AMMONOTHERMAL MANUFACTURE OF GALLIUM NITRIDE CRYSTALS AND METHODS OF USE
App. No. 13/656,615
→
LARGE AREA, LOW-DEFECT GALLIUM-CONTAINING NITRIDE CRYSTALS, METHOD OF MAKING, AND METHOD OF USE
App. No. 13/600,191
→
High Pressure Apparatus and Method for Nitride Crystal Growth
App. No. 13/556,105
→
NITRIDE CRYSTAL WITH REMOVABLE SURFACE LAYER AND METHODS OF MANUFACTURE
App. No. 13/425,304
→
High Pressure Apparatus and Method for Nitride Crystal Growth
App. No. 13/343,563
→
Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride
App. No. 13/226,249
→
AMMONOTHERMAL METHOD FOR GROWTH OF BULK GALLIUM NITRIDE
App. No. 13/175,739
→
Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
App. No. 12/988,772
→
Semi-insulating Group III Metal Nitride and Method of Manufacture
App. No. 13/041,199
→
High Pressure Apparatus and Method for Nitride Crystal Growth
App. No. 13/013,697
→
HIGH PRESSURE APPARATUS WITH STACKABLE RINGS
App. No. 12/891,668
→
POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING
App. No. 12/634,665
→
LARGE-AREA BULK GALLIUM NITRIDE WAFER AND METHOD OF MANUFACTURE
App. No. 12/556,562
→
LARGE-AREA SEED FOR AMMONOTHERMAL GROWTH OF BULK GALLIUM NITRIDE AND METHOD OF MANUFACTURE
App. No. 12/556,558
→
NITRIDE CRYSTAL WITH REMOVABLE SURFACE LAYER AND METHODS OF MANUFACTURE
App. No. 12/546,458
→
PROCESS AND APPARATUS FOR LARGE-SCALE MANUFACTURING OF BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE
App. No. 12/534,857
→
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES
App. No. 12/534,844
→
PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING NITRIDE USING AN AZIDE MINERALIZER
App. No. 12/534,849
→
APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MANUFACTURING OF GALLIUM NITRIDE
App. No. 12/534,843
→
HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
App. No. 12/478,736
→
HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
App. No. 12/133,364
→
METHOD FOR FORMING NITRIDE CRYSTALS
App. No. 11/973,182
→
HEATER, APPARATUS, AND ASSOCIATED METHOD
App. No. 11/521,034
→
METHOD FOR MAKING CRYSTALLINE COMPOSITION
App. No. 11/313,528
→
APPARATUS FOR MAKING CRYSTALLINE COMPOSITION
App. No. 11/313,442
→
CRYSTALLINE COMPOSITION, DEVICE, AND ASSOCIATED METHOD
App. No. 11/313,451
→
APPARATUS FOR PRODUCING SINGLE CRYSTAL AND QUASI-SINGLE CRYSTAL, AND ASSOCIATED METHOD
App. No. 11/249,896
→
ETCHANT, METHOD OF ETCHING, LAMINATE FORMED THEREBY, AND DEVICE
App. No. 11/167,719
→
APPARATUS FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS AND METHODS THEREOF
App. No. 11/042,858
→
HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 11/010,139
→
HIGH PRESSURE/HIGH TEMPERATURE APPARATUS WITH IMPROVED TEMPERATURE CONTROL FOR CRYSTAL GROWTH
App. No. 10/699,504
→
HOMOEPITAXIAL GALLIUM-NITRIDE-BASED ELECTRONIC DEVICES AND METHOD FOR PRODUCING SAME
App. No. 10/329,982
→
HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES
App. No. 10/063,164
→
HIGH TEMPERATURE HIGH PRESSURE CAPSULE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS
App. No. 09/683,659
→
SINTERED POLYCRYSTALLINE GALLIUM NITRIDE AND ITS PRODUCTION
App. No. 10/001,575
→