Patent Assignment
Reel/Frame 047702/0815
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2018-12-07
Received: 2018-12-07
Pages: 7
Assignor
SAMSUNG ELECTRONICS CO., LTD.
Executed: 2018-11-15
Assignee
FIO SEMICONDUCTOR TECHNOLOGIES, LLC
1717 MCKINNEY AVENUE, SUITE 1050, DALLAS, TX, 75202, UNITED STATES
Covered Applications
(16)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
App. No. 14/635,588
→
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
App. No. 14/152,440
→
MULTILEVEL CELL NONVOLATILE MEMORY SYSTEM
App. No. 13/798,419
→
METHODS OF FORMING NONVOLATILE MEMORY DEVICES HAVING ELECTROMAGNETICALLY SHIELDING SOURCE PLATES
App. No. 13/349,181
→
SEMICONDUCTOR DEVICE WITH A PICK-UP REGION
App. No. 13/109,230
→
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
App. No. 12/923,497
→
METHODS OF MANUFACTURING CHARGE TRAP TYPE MEMORY DEVICES
App. No. 12/726,014
→
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES INCLUDING SELECT GATE PATTERNS HAVING DIFFERENT WORK FUNCTION FROM CELL GATE PATTERNS
App. No. 12/651,727
→
NONVOLATILE MEMORY DEVICES HAVING ELECTROMAGNETICALLY SHIELDING SOURCE PLATES
App. No. 12/437,209
→
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
App. No. 11/798,947
→
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
App. No. 11/657,650
→
REDUNDANCY SELECTOR CIRCUIT FOR USE IN NON-VOLATILE MEMORY DEVICE
App. No. 11/444,353
→
CHARGE TRAP-TYPE 3-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME
App. No. 11/341,341
→
FLASH MEMORY AND METHOD OF FABRICATING THE SAME
App. No. 11/327,321
→
ROW DECODER CIRCUIT FOR USE IN NON-VOLATILE MEMORY DEVICE
App. No. 11/167,984
→
PAGE BUFFER FOR NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATION
App. No. 11/133,214
→