Patent Assignment
Reel/Frame 051210/0211
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2019-12-05
Received: 2019-12-05
Pages: 11
Assignor
SORAA, INC.
Executed: 2019-10-24
Assignee
SLT TECHNOLOGIES, INC.
C/O LOEB & LOEB, 10100 SANTA MONICA BLVD., SUITE 2200, LOS ANGELES, CA, 90067, UNITED STATES
Covered Applications
(50)
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
App. No. 16/550,947
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METHOD OF FORMING A GAN SINGLE CRYSTAL COMPRISING DISPOSING A NUCLEATION CENTER IN A FIRST REGION, A GAN SOURCE MATERIAL IN A SECOND REGION, AND ESTABLISHING A TEMPERATURE DISTRIBUTION
App. No. 16/246,065
→
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
App. No. 15/865,391
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DOOR ASSEMBLY
App. No. 15/715,434
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Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
App. No. 15/426,770
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CRYSTALLINE GALLIUM NITRIDE CONTAINING FLOURINE
App. No. 15/061,069
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POLARIZED WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND TRANSPARENT PHOSPHORS
App. No. 14/979,027
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WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS
App. No. 14/882,893
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GALLIUM-NITRIDE-ON-HANDLE SUBSTRATE MATERIALS AND DEVICES AND METHOD OF MANUFACTURE
App. No. 14/301,520
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SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES
App. No. 14/302,250
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WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS
App. No. 14/035,693
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LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT
App. No. 13/731,453
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POLARIZED WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND TRANSPARENT PHOSPHORS
App. No. 13/623,788
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SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES
App. No. 13/621,485
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Polarization Direction of Optical Devices Using Selected Spatial Configurations
App. No. 13/553,691
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LARGE AREA NONPOLAR OR SEMIPOLAR GALLIUM AND NITROGEN CONTAINING SUBSTRATE AND RESULTING DEVICES
App. No. 13/548,931
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Method and Surface Morphology of Non-Polar Gallium Nitride Containing Substrates
App. No. 13/548,635
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METHOD AND SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES
App. No. 13/548,770
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WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS
App. No. 13/360,535
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Method for Growth of Indium-Containing Nitride Films
App. No. 13/346,507
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METHOD OF MAKING BULK INGAN SUBSTRATES AND DEVICES THEREON
App. No. 13/272,981
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GALLIUM-NITRIDE-ON-HANDLE SUBSTRATE MATERIALS AND DEVICES AND METHOD OF MANUFACTURE
App. No. 13/012,674
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MULTI COLOR ACTIVE REGIONS FOR WHITE LIGHT EMITTING DIODE
App. No. 12/880,803
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GaN Containing Optical Devices and Method with ESD Stability
App. No. 12/785,953
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HIGH INDIUM CONTAINING INGAN SUBSTRATES FOR LONG WAVELENGTH OPTICAL DEVICES
App. No. 12/785,404
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POLARIZED WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND TRANSPARENT PHOSPHORS
App. No. 12/754,886
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METHOD AND STRUCTURE FOR MANUFACTURE OF LIGHT EMITTING DIODE DEVICES USING BULK GAN
App. No. 12/749,476
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POLARIZATION DIRECTION OF OPTICAL DEVICES USING SELECTED SPATIAL CONFIGURATIONS
App. No. 12/720,593
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MICROCAVITY LIGHT EMITTING DIODE METHOD OF MANUFACTURE
App. No. 12/569,337
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PHOTONIC-CRYSTAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE
App. No. 12/569,844
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WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS
App. No. 12/534,829
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METHOD AND SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES
App. No. 12/497,289
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SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES
App. No. 12/484,924
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CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD
App. No. 11/621,556
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CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE
App. No. 11/621,560
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GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/559,146
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Method of making a gallium nitride crystalline composition having a low dislocation density
App. No. 11/558,048
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GALLIUM NITRIDE CRYSTAL AND METHOD OF MAKING SAME
App. No. 11/588,181
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METHOD FOR REDUCING DEFECT CONCENTRATION IN CRYSTALS
App. No. 11/300,660
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GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
App. No. 11/010,507
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HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 10/932,127
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HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/831,865
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LIGHT-BASED SYSTEM FOR DETECTING ANALYTES
App. No. 10/746,292
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GROUP III-NITRIDE BASED RESONANT CAVITY LIGHT EMITTING DEVICES FABRICATED ON SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATES
App. No. 10/693,803
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HOMOEPITAXIAL GALLIUM-NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING
App. No. 10/440,574
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GALLIUM NITRIDE CRYSTAL AND METHOD OF MAKING SAME
App. No. 10/329,981
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APPARATUS AND METHOD FOR CHANNEL MONITORING IN A HYBRID DISTRIBUTED RAMAN/EDFA OPTICAL AMPLIFIER
App. No. 09/898,244
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THULIUM DOPED FIBER AMPLIFIER PUMPING SCHEME
App. No. 09/862,770
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HOMOEPITAXIAL GALLIUM NITRIDE BASED PHOTODETECTOR AND METHOD OF PRODUCING
App. No. 09/839,941
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PIEZO-ACTUATOR BASED OPTICAL ADD/DROP MODULE
App. No. 09/773,212
→