Assignment of Assignor's Interest

Recorded: 2021-11-04 Pages: 4

Assignor

SELISKAR, JOHN JAMES

Executed: 2021-10-27

Assignee

100 OVERLOOK CENTER, 2ND FLOOR, PRINCETON, NEW JERSEY, 08540

Covered Properties (7)

Fully-Depleted Castellated Gate Mosfet Device and Method of Manufacture Thereof

Patent: 7,211,864 →

Application: 10/940,093 →

Publication: US 2005/0056892

Mixed-Signal Semiconductor Platform Incorporating Fully-Depleted Castellated-Gate Mosfet Device and Method of Manufacture Thereof

Patent: 7,719,058 →

Application: 11/249,002 →

Publication: US 2007/0080409

Fully-Depleted Castellated Gate Mosfet Device and Method of Manufacture Thereof

Patent: 7,439,139 →

Application: 11/728,111 →

Publication: US 2007/0218635

Castellated Gate Mosfet Device Capable of Fully-Depleted Operation

Patent: 7,714,384 →

Application: 11/796,652 →

Publication: US 2007/0221992

Castellated Gate Mosfet Tetrode Capable of Fully-Depleted Operation

Patent: 8,138,544 →

Application: 12/660,233 →

Publication: US 2010/0155835

Mixed-Signal Semiconductor Platform Incorporating Fully-Depleted Castellated-Gate Mosfet Device and Method of Manufacture Thereof

Patent: 7,968,409 →

Application: 12/661,914 →

Publication: US 2010/0317163

Castellated Gate Mosfet Tetrode Capable of Fully-Depleted Operation

Patent: 8,664,071 →

Application: 13/385,990 →

Publication: US 2012/0228710

Related Assignments (1)

Other recorded transfers of the patents in this record — the chain of ownership.