IP Library › Granted Patent US 10,366,873
Granted Patent B2
US 10,366,873 · App. 15/970,348 · Granted Jul 30, 2019

Cryogenic 2D linear ion trap and uses thereof

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Quick Facts
Patent No.
US 10,366,873
App. No.
15/970,348
Filed
May 3, 2018
Granted
Jul 30, 2019
Kind
B2
Art Unit
2881
USPC
250/283
Abstract

Described herein are cryogenic linear ion traps and uses thereof.

Claims (41)

1. A rectilinear ion trap comprising:

spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define a trap volume, wherein each of the x flat RF electrodes comprise a slit;

a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;

a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,

sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and

fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers.

2. The rectilinear ion trap of claim 1 , wherein the rectilinear ion trap is configured to operate a cryogenic temperatures.

3. The rectilinear ion trap of claim 1 , further comprising insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

4. The rectilinear ion trap of claim 3 , wherein the insulating spacers comprise a Kel-F, PEEK, or Teflon insulating material.

5. The rectilinear ion trap of claim 1 , wherein one or more components of the rectilinear ion trap comprises stainless steel.

6. The rectilinear ion trap of claim 5 , wherein the rectilinear ion trap is configured to operate at cryogenic temperatures.

7. The rectilinear ion trap of claim 5 , wherein one or more components of the rectilinear ion trap comprises copper.

8. The rectilinear ion trap of claim 7 , wherein the rectilinear trap is configured to operate at cryogenic temperatures down to about 12K.

9. The rectilinear ion trap of claim 1 , wherein one or more components of the rectilinear ion trap comprises copper.

10. The rectilinear ion trap of claim 9 , further comprising insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

11. The rectilinear ion trap of claim 10 , wherein the rectilinear ion trap is configured to operate at cryogenic temperatures down to about 12K.

12. The rectilinear ion trap of claim 1 , wherein the rectilinear ion trap is configured to perform mass selection of ions and infrared mass spectra analysis inside the rectilinear ion trap.

13. A mass spectrometer comprising:

a rectilinear ion trap comprising:

spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define a trap volume, wherein each of the x flat RF electrodes comprise a slit;

a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;

a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,

sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and

fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers.

14. The mass spectrometer of claim 13 , wherein the rectilinear ion trap is configured to operate a cryogenic temperatures.

15. The mass spectrometer of claim 13 , wherein the rectilinear ion trap further comprises insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

16. The mass spectrometer of claim 15 , wherein the insulating spacers comprise Kel-F, PEEK, or Teflon insulating material.

17. The mass spectrometer of claim 13 , wherein one or more components of the rectilinear ion trap is made of stainless steel.

18. The mass spectrometer of claim 13 , wherein in one or more components of the rectilinear ion trap is made of copper.

19. The mass spectrometer of claim 13 , wherein the rectilinear ion trap is configured to perform mass selection of ions and infrared mass spectra analysis inside the rectilinear ion trap.

20. A method of mass spectrometry comprising:

trapping ions in a trap volume of a rectilinear ion trap,

wherein the rectilinear ion trap comprises spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define the trap volume, wherein each of the x flat RF electrodes comprise a slit;

a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;

a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,

sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and

fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers;

removing mass interferences by ejecting some ions from the trap volume;

tagging the ions remaining in the trap volume by pulsing a cooled gas containing the tagging agent into the trap volume;

ejecting untagged ions from the trap volume based on mass; and

irradiating the remaining ions in the trap volume with infrared radiation.