Liquid crystal display device and method for manufacturing TFT array substrate

1. A liquid crystal display device comprising:

a TFT array substrate having a thin film transistor formed in each of pixel areas; and

a counter substrate including a black matrix in which an opening part is formed in each of areas corresponding to the pixel areas, the TFT array substrate including:

a protective film formed on a drain electrode of the thin film transistor;

a contact hole formed in the protective film so as to reach the drain electrode; and

a pixel electrode formed on the protective film so as to be connected to the drain electrode through the contact hole, wherein

an inner wall of the contact hole includes a first sloped part and a second sloped part, which are aligned with each other in line in a circumferential direction of the contact hole, the circumferential direction being parallel to a main surface of the TFT array substrate, and the first sloped part and second sloped part have slope angles different from each other,

the slope angle of the second sloped part is greater than the slope angle of the first sloped part,

the contact hole is formed such that a part of a bottom horizontal surface of the contact hole extends beyond the drain electrode,

the first sloped part is formed on a surface located at a part, of the inner wall of the contact hole, in which the bottom horizontal surface of the contact hole is located on the drain electrode, and

the second sloped part is formed on a surface located at a part, of the inner wall of the contact hole, in which the bottom horizontal surface of the contact hole extends beyond the drain electrode.

2. The liquid crystal display device according to claim 1 , wherein the slope angle of the first sloped part is not less than 45° and not more than 55°, and

the slope angle of the second sloped part is not less than 80° and not more than 90°.

3. The liquid crystal display device according to claim 1 , wherein the TFT array substrate includes:

an insulating substrate,

a gate electrode, of the thin film transistor, formed on the insulating substrate;

a gate insulating film, of the thin film transistor, formed on the gate electrode;

a semiconductor layer, of the thin film transistor, formed on the gate insulating film; and

a source electrode and the drain electrode, of the thin film transistor, formed on the semiconductor layer and the gate insulating film,

wherein the part, of the contact hole, extending beyond the drain electrode penetrates through the gate insulating film and reaches the insulating substrate.