Infrared detector, infrared detection device, and method of manufacturing infrared detector
View Patent ↗An infrared detector includes a pixel separation wall. The infrared detector includes a semiconductor crystal substrate; a first contact layer formed on the semiconductor crystal substrate, a pixel separation wall formed on the first contact layer and configured to separate pixels; a buffer layer formed on the first contact layer and on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall, an infrared-absorbing layer formed on the buffer layer, a second contact layer formed on the infrared-absorbing layer, an upper electrode formed on the second contact layer, and a lower electrode formed on the first contact layer. The buffer layer and the first contact layer are formed of a compound semiconductor of a first conductivity type. The pixel separation wall and the second contact layer are formed of a compound semiconductor of a second conductivity type.
1. An infrared detector comprising:
a semiconductor crystal substrate;
a first contact layer formed on the semiconductor crystal substrate, the first contact layer being a compound semiconductor of a first conductivity type;
a plurality of pixels formed on the first contact layer;
a pixel separation wall, formed on the first contact layer, configured to separate each of the plurality of pixels, the pixel separation wall being a compound semiconductor of a second conductivity type;
the plurality of pixels including a buffer layer formed on the first contact layer and of the compound semiconductor of the first conductivity type and formed on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall;
an infrared-absorbing layer formed on the buffer layer and being a compound semiconductor;
a second contact layer formed on the infrared-absorbing layer and being of the compound semiconductor of the second conductivity type;
an upper electrode formed on the second contact layer; and
a lower electrode formed on the first contact layer.
2. The infrared detector according to claim 1 , wherein
the infrared-absorbing layer is formed of a superlattice structure.
3. The infrared detector according to claim 1 , wherein
the infrared-absorbing layer is formed of a superlattice structure of indium arsenide (InAs) and gallium antimonide (GaSb).
4. The infrared detector according to claim 1 , wherein
the infrared-absorbing layer includes
a superlattice structure layer of the first conductivity type formed on the buffer layer,
a non-doped superlattice structure layer formed on the superlattice structure layer of the first conductivity type, and
a superlattice structure layer of the second conductivity type formed on the non-doped superlattice structure layer.
5. The infrared detector according to claim 1 , wherein
the first contact layer is formed of a material including GaSb of the first conductivity type,
the pixel separation wall is formed of a material including GaSb of the second conductivity type, and
the buffer layer is formed of the material including GaSb of the first conductivity type.
6. The infrared detector according to claim 1 , wherein
the first conductivity type is a p type and the second conductivity type is an n type.
7. The infrared detector according to claim 1 , wherein
the first conductivity type is an n type and the second conductivity type is a p type.
8. The infrared detector according to claim 1 , wherein
the semiconductor crystal substrate is formed of GaSb, and
the second contact layer is formed of a material including InAs of the second conductivity type.
9. An infrared detection device, comprising:
the infrared detector according to claim 1 ; and
a signal readout circuit element that is connected to the infrared detector.
10. A method of manufacturing an infrared detector, comprising:
forming, on a semiconductor crystal substrate, a first contact layer of a compound semiconductor of a first conductivity type and a separation wall forming layer of a compound semiconductor of a second conductivity type in a laminated manner by epitaxial growth;
forming a silicon oxide mask on the separation wall forming layer;
forming a pixel separation wall by removing the separation wall forming layer with the silicon oxide mask being a mask;
forming, on the first contact layer and a side surface of the pixel separation wall, a buffer layer of the compound semiconductor of the first conductivity type, an infrared-absorbing layer of a compound semiconductor, and a second contact layer of the compound semiconductor of the second conductivity type in a laminated manner by epitaxial growth; and
forming an upper electrode on the second contact layer and a lower electrode on the first contact layer.
11. The method of manufacturing an infrared detector according to claim 10 , wherein
the forming the pixel separation wall includes removing the separation wall forming layer by wet etching with the silicon oxide mask being the mask.
12. The method of manufacturing an infrared detector according to claim 10 , wherein
the forming the buffer layer, the infrared-absorbing layer, and the second contact layer in a laminated manner includes selectively growing the buffer layer, the infrared-absorbing layer, and the second contact layer with the silicon oxide mask remaining on the pixel separation wall.
13. The method of manufacturing an infrared detector according to claim 10 , wherein
the infrared-absorbing layer is formed of a superlattice structure.
14. The method of manufacturing an infrared detector according to claim 10 , wherein
the infrared-absorbing layer is formed of a superlattice structure of InAs and GaSb.
15. The method of manufacturing an infrared detector according to claim 10 , wherein
the infrared-absorbing layer includes
a superlattice structure layer of the first conductivity type formed on the buffer layer,
a non-doped superlattice structure layer formed on the superlattice structure layer of the first conductivity type, and
a superlattice structure layer of the second conductivity type formed on the non-doped superlattice structure layer.
16. The method of manufacturing an infrared detector according to claim 10 , wherein
the first contact layer is formed of a material including GaSb of the first conductivity type,
the pixel separation wall is formed of a material including GaSb of the second conductivity type, and
the buffer layer is formed of the material including GaSb of the first conductivity type.
17. The method of manufacturing an infrared detector according to claim 10 , wherein
the first conductivity type is a p type and the second conductivity type is an n type.
18. The method of manufacturing an infrared detector according to claim 10 , wherein
the first conductivity type is an n type and the second conductivity type is a p type.
19. The method of manufacturing an infrared detector according to claim 10 , wherein
the semiconductor crystal substrate is formed of GaSb, and
the second contact layer is formed of a material including InAs of the second conductivity type.
20. The method of manufacturing an infrared detector according to claim 10 , wherein
the epitaxial growth is achieved by molecular beam epitaxy.