Low stress asymmetric dual side module
Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.
1. A semiconductor package comprising:
a first substrate comprising two or more die coupled to a first side of the first substrate, wherein a first clip is coupled to each of the two or more die coupled to the first side of the first substrate;
a second substrate comprising two or more die coupled to a first side of the second substrate, wherein a second clip is coupled to each of the two or more die coupled to the first side of the second substrate;
two or more spacers coupled to the first side of the first substrate; and
a lead frame comprised between the first substrate and the second substrate;
a molding compound encapsulating the lead frame wherein a second side of each of the first substrate and the second substrate are exposed through the molding compound; and
wherein a perimeter of the first substrate only partially overlaps a perimeter of the second substrate and the perimeter of the second substrate only partially overlaps the perimeter of the first substrate when the first substrate and second substrate are coupled through the two or more spacers.
2. The semiconductor package of claim 1 , wherein the two or more die include an insulated-gate bipolar transistors (IGBT) and a fast recovery die (FRD).
3. The semiconductor package of claim 1 , wherein the first substrate and the second substrate comprise a direct bonded copper substrate with one of an alumina (Al 2 O 3 ) ceramic doped with zirconium dioxide (ZrO 2 ), a silicon nitride (Si3N4) ceramic, an aluminum nitride (AlN) ceramic, a high strength AN (H—AlN) ceramic, and any combination thereof.
4. The semiconductor package of claim 1 , further comprising a heat sink coupled with one of the second side of the first substrate, the second side of the second substrate, or any combination thereof.
5. The semiconductor package of claim 1 , wherein the two or more spacers are comprised of electrically conductive material and electrically couple the first substrate to the second substrate.
6. The semiconductor package of claim 1 , wherein the first substrate and the second substrate comprise one of a direct bonded copper substrate (DBC), an insulated metal substrate technology (IMST) substrate, an active metal bonding (AMB) substrate, or any combination thereof.
7. A semiconductor package comprising:
a lead frame;
a first substrate mechanically and electrically coupled to a first side of the lead frame, the first substrate comprising two or more die on the first side of the first substrate, wherein a first clip is coupled to each of the two or more die on the first side of the first substrate;
a second substrate mechanically and electrically coupled to a second side of the lead frame, the second substrate comprising two or more die on the first side of the second substrate, wherein a second clip is coupled to each of the two or more die on the first side of the second substrate;
two or more spacers coupled to the first side of each of the first substrate and the second substrate; and
a molding compound encapsulating the first side and the second side of the lead frame;
wherein the first substrate and the second substrate are asymmetrically coupled through the two or more spacers; and
wherein a perimeter of the first side of the first substrate extends beyond a perimeter of the first side of the second substrate and the perimeter of the first side of the second substrate extends beyond the perimeter of the first side of the first substrate.
8. The semiconductor package of claim 7 , wherein the two or more die include an insulated-gate bipolar transistors (IGBT) and a fast recovery die (FRD).
9. The semiconductor package of claim 7 , wherein the first substrate and the second substrate comprise a direct bonded copper substrate with one of an alumina (Al 2 O 3 ) ceramic doped with zirconium dioxide (ZrO 2 ), a silicon nitride (Si3N4) ceramic, an aluminum nitride (AlN) ceramic, a high strength AN (H—AlN) ceramic, and any combination thereof.
10. The semiconductor package of claim 7 , further comprising a heat sink coupled with one of the second side of the first substrate, the second side of the second substrate, or any combination thereof.
11. The semiconductor package of claim 7 , wherein the two or more spacers are comprised of electrically conductive material and electrically couple the first substrate to the second substrate.
12. The semiconductor package of claim 7 , wherein the first substrate and the second substrate comprise one of a direct bonded copper substrate (DBC), an insulated metal substrate technology (IMST) substrate, an active metal bonding (AMB) substrate, or any combination thereof.