Package process, DAF replacement

1. A method comprising:

dicing a wafer;

applying a mask;

spraying die bond material, in a liquid form at a first temperature, to a surface of the wafer, wherein the die bond material comprises at least one additive that increases a viscosity of the die bond material while in the liquid form to enable the spraying to achieve a targeted thickness for the die bond material;

cooling the die bond material at a second temperature to at least partially solidify the die bond material;

removing the mask from the wafer through the die bond material, wherein the die bond material reforms to provide a single surface based on a level of solidification of the die bond material after the removing of the mask; and

after the removing of the mask, curing the die bond material to form a die attach film layer on the wafer.

2. The method of claim 1 , wherein the die attach film layer comprises a thickness along a range of 2 μM to 5 μM.

3. The method of claim 2 , wherein the die attach film layer comprises a thickness of 3 μM.

4. The method of claim 1 , wherein the first temperature is approximately 220° C., and wherein the second temperature is approximately 80° C.

5. The method of claim 1 , wherein the die bond material comprises 1,2 dichloro, 2-fluroethane.

6. The method of claim 1 , wherein a die to die shear force is greater than 0.5 MPa.

7. The method of claim 1 , further comprising:

applying a back grinding tape to a second surface of the wafer prior to dicing.

8. The method of claim 7 , further comprising:

grinding the surface of the wafer prior to dicing.

9. The method of claim 7 , further comprising:

removing the back grinding tape from the second surface of the wafer following the curing.

10. The method of claim 1 , wherein the mask is comprised of a metal resistant to deformation at the first temperature.

11. The method of claim 1 , wherein the mask is removed from the wafer through the die bond material as the die bond material is at least partially solidified.