Optoelectronic device and method of manufacture thereof
A method of manufacturing an optoelectronic device. The manufactured device includes a photonic component coupled to a waveguide. The method comprising: providing a device coupon, the device coupon including the photonic component; providing a silicon platform, the silicon platform comprising a cavity within which is a bonding surface for the device coupon; transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the III-V semiconductor based photonic component to the silicon waveguide.
1. A method of manufacturing an optoelectronic device, the manufactured device including a photonic component coupled to a waveguide, the method comprising:
providing a device coupon, the device coupon including the photonic component;
providing a platform comprising a wafer, the wafer comprising a substrate, a buried oxide (BOX) layer on the substrate, and a semiconductor device layer on the BOX layer, the wafer having a cavity extending through the semiconductor device layer, and a bonding surface for the device coupon being within the cavity;
transfer printing the device coupon onto the cavity, such that a surface of the device coupon directly abuts the bonding surface and at least one channel is present between the device coupon and a sidewall of the cavity; and
filling the at least one channel with a filling material via a spin-coating process, to form a bridge coupling the photonic component to the waveguide.
2. The method of claim 1 , further comprising a step of curing the filling material after it has been spun-coated.
3. The method of claim 1 , wherein the device coupon includes a first and second electrode.
4. The method of claim 1 , wherein the wafer is a silicon-on-insulator wafer and a silicon waveguide is in the semiconductor device layer, the silicon waveguide directly abutting the cavity.
5. The method of claim 4 , wherein the silicon waveguide includes a waveguide tapering in height in a direction towards the cavity, from a first height to a second height, the first height being greater than the second height.
6. The method of claim 4 , wherein the silicon waveguide includes a T-bar end portion, positioned adjacent to the cavity.
7. The method of claim 4 , wherein the silicon waveguide includes a Bragg grating.
8. The method of claim 1 , wherein the platform has a silicon nitride waveguide.
9. The method of claim 8 , wherein the silicon nitride waveguide includes a Bragg grating.
10. The method of claim 1 , wherein the photonic component is made of III-V materials.
11. The method of claim 1 , wherein the photonic component is made of II-VI materials.
12. The method of claim 1 , wherein the photonic component is made of group IV materials.
13. The method of claim 1 , wherein the photonic component comprises regular quantum wells.
14. The method of claim 1 , wherein the photonic component comprises triangle quantum wells.
15. The method of claim 1 , wherein the photonic component is a photodetector.
16. The method of claim 1 , wherein the photonic component is an electro-absorption modulator, EAM, utilising the quantum confined stark effect, QCSE.
17. The method of claim 1 , wherein the photonic component is an electro-absorption modulator, EAM, utilising the Franz-Keldysh, FK effect.
18. The method of claim 1 , wherein the photonic component includes a U-shaped waveguide, and the platform includes two waveguides, each coupled to a respective leg of the U-shaped waveguide.
19. The method of claim 1 , further including a step, before filling the channel, of lining one or more sidewalls of the cavity with an anti-reflective liner.