Optoelectronic device

1. An optoelectronic device, the optoelectronic device including:

a silicon platform, including:

a silicon substrate;

a buried oxide (BOX) layer above the silicon substrate;

a silicon waveguide above the BOX layer; and

a cavity, wherein a bed of the cavity is provided at least in part by the BOX layer;

a III-V semiconductor-based optoelectronic component, bonded to the bed of the cavity of the silicon platform; and

a bridge-waveguide comprising a slab and a ridge protruding from the slab, the bridge-waveguide being located between the silicon waveguide and the III-V semiconductor-based optoelectronic component and having a thickness, as measured in a direction from the silicon waveguide to the III-V semiconductor-based optoelectronic component, of 10 μm to 20 μm,

wherein the BOX layer extends entirely beneath: the silicon waveguide, the III-V semiconductor-based optoelectronic component, and the bridge-waveguide, so as to separate them from the silicon substrate,

wherein a height of the BOX layer, as measured from the silicon substrate, is uniform,

wherein the bridge-waveguide includes a tapered region, tapering from a first width at a first position proximal to the Ill-V semiconductor-based optoelectronic component to a second width at a second position proximal to the silicon waveguide, wherein the first width is smaller than the second width, and

wherein the ridge of the bridge-waveguide has:

a first height, as measured from the BOX layer, at a third position between the III-V semiconductor-based optoelectronic component and the first position;

a second height, as measured from the BOX layer, at the first position, the second height being greater than the first height; and

the second height, as measured from the BOX layer, at the second position, and

wherein the ridge of the bridge-waveguide has a two-tiered ridge comprising a first ridge portion, protruding from the slab, and a second ridge portion, protruding from the first ridge portion.

2. The optoelectronic device of claim 1 , wherein the bridge-waveguide comprises amorphous silicon.

3. The optoelectronic device of claim 1 , wherein the III-V semiconductor-based optoelectronic component includes an antireflective coating located adjacent to the bridge-waveguide.

4. The optoelectronic device of claim 3 , wherein the antireflective coating includes plural layers.

5. The optoelectronic device of claim 4 , wherein the plural layers are silicon based.

6. The optoelectronic device of claim 4 , wherein the plural layers include: a first silicon dioxide layer, a silicon nitride layer, and a second silicon dioxide layer, wherein the silicon nitride layer is interposed between the first silicon dioxide layer and the second silicon dioxide layer.

7. The optoelectronic device of claim 3 , wherein the III-V semiconductor-based optoelectronic component includes an isolation layer, and the antireflective coating extends from the isolation layer up a lateral facet of the III-V semiconductor-based optoelectronic component.

8. The optoelectronic device of claim 1 , wherein the III-V semiconductor-based optoelectronic component includes a T-bar interface between the III-V semiconductor-based optoelectronic component and the bridge-waveguide.

9. The optoelectronic device of claim 1 , wherein the bridge-waveguide includes a T-bar interface between the bridge-waveguide and the III-V semiconductor-based optoelectronic component.

10. The optoelectronic device of claim 1 , wherein an interface between the III-V semiconductor-based optoelectronic component and the bridge-waveguide is angled relative to a transmission direction of light through the bridge-waveguide.

11. The optoelectronic device of claim 1 , wherein the silicon waveguide includes a tapered region, tapering from a third width proximal to the bridge-waveguide to a fourth width distal to the bridge-waveguide, wherein the third width is smaller than the fourth width.

12. The optoelectronic device of claim 1 , wherein the bridge-waveguide and the silicon waveguide include a tapered region, tapering from the first width at the first position along the bridge-waveguide to a third width at a third position along the silicon waveguide, wherein the first width is smaller than the third width.

13. The optoelectronic device of claim 1 , wherein the silicon waveguide includes a slab region and ridge region.

14. A method of manufacturing the optoelectronic device of claim 1 , the method including steps of:

bonding the III-V semiconductor-based optoelectronic component to the bed of the cavity such that there is a space between the III-V semiconductor-based optoelectronic component and a sidewall of the cavity; and

filling the space between the III-V semiconductor-based optoelectronic component and the sidewall with a bridge-waveguide material.

15. The method of claim 14 , wherein the method includes a step, after bonding the III-V semiconductor-based optoelectronic component, of performing one or more further processing steps on the III-V semiconductor-based optoelectronic component.

16. The method of claim 15 , wherein the one or more further processing steps include one or more of the following:

a waveguide etch, an isolation etch, a via opening etch, and a metallisation step.

17. The method of claim 15 , wherein the one or more further processing steps includes a waveguide patterning step, in which waveguides are simultaneously patterned in each of the III-V semiconductor-based optoelectronic component, the bridge-waveguide material, and the silicon platform.

18. The method of claim 17 , wherein the waveguides patterned in the bridge-waveguide material and silicon platform are etched simultaneously.