Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same
A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction includes a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack. The free layer stack has a total thickness of less than 2 nm, and contains in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer.
1. A method of forming a spin-transfer torque (STT) magnetoresistive memory device, comprising:
forming a reference layer having a fixed magnetization direction;
forming a nonmagnetic tunnel barrier layer over the reference layer; and
forming a free layer stack on the non-magnetic tunnel barrier layer by sequentially forming a proximal ferromagnetic layer, an intermediate ferromagnetic layer, a magnesium layer on a top surface of the intermediate ferromagnetic layer, a non-magnetic metal sub-monolayer having a thickness in a range from 0.1 Angstrom to 0.3 Angstrom and comprising tungsten, and a distal ferromagnetic layer;
wherein the proximal ferromagnetic layer comprises a proximal CoFeB layer, the intermediate ferromagnetic layer comprises an intermediate CoFe layer, and the distal ferromagnetic layer comprises a distal CoFe layer; and
wherein the magnesium layer is removed during formation of the non-magnetic metal sub-monolayer by atoms of the tungsten impinging on the magnesium layer.
2. A spin-transfer torque (STT) magnetoresistive memory device, comprising:
a first electrode;
a second electrode; and
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack,
wherein the free layer stack comprises, in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, an intermediate ferromagnetic layer, a non-magnetic metal sub-monolayer having a thickness in a range from 0.1 Angstrom to 0.3 Angstrom and comprising tungsten or tantalum, and a distal ferromagnetic layer;
wherein the free layer stack further comprises an additional ferromagnetic layer which directly contacts the proximal ferromagnetic layer and is located between the proximal ferromagnetic layer and the intermediate ferromagnetic layer.
3. A method of forming a spin-transfer torque (STT) magnetoresistive memory device, comprising:
forming a reference layer having a fixed magnetization direction;
forming a nonmagnetic tunnel barrier layer over the reference layer;
sequentially forming a proximal ferromagnetic layer and an intermediate ferromagnetic layer;
forming a magnesium layer on a top surface of the intermediate ferromagnetic layer;
forming a non-magnetic metal layer, wherein the magnesium layer is removed during formation of the non-magnetic metal layer by atoms of the non-magnetic metal layer impinging on the magnesium layer; and
forming a distal ferromagnetic layer on the non-magnetic metal layer to form a free layer stack comprising the proximal ferromagnetic layer, the intermediate ferromagnetic layer, the non-magnetic metal layer, and the distal ferromagnetic layer.
4. The method of claim 3 , wherein:
the non-magnetic metal layer comprises tungsten;
the intermediate ferromagnetic layer comprises CoFeB; and
the nonmagnetic tunnel barrier layer comprises magnesium oxide.