Using a zone wordline table to initiate a find last good page process
A memory device includes a wordline zone table that stores information about how wordlines of one or more memory blocks are divided into wordline zones. The wordline zone table also stores a value associated with each wordline zone. When the memory device receives a command, a controller identifies a wordline associated with the command. The controller uses the wordline zone table to determine the wordline zone, and the value, associated with the wordline. The value is stored in a non-data wordline. When a find last good page (FLGP) process is initiated in response to an ungraceful device shutdown (UGDS) event, the controller determines the value stored in the non-data wordline. The controller compares the value in the non-data wordline to the values in the wordline zone table to determine which wordline zone matches the value. The FLPG process is applied to the wordline zone having the matching value.
1 . A method, comprising:
dividing wordlines of a memory block of a memory device into a plurality of wordline zones, each wordline zone of the plurality of wordline zones being associated with a value;
receiving a command from a host device;
identifying a wordline associated with the command;
determining whether the wordline associated with the command is a boundary wordline associated with a particular wordline zone; and
based, at least in part, on determining the wordline is a boundary wordline associated with the particular wordline zone, storing the value associated with the particular wordline zone in a non-data wordline.
2 . The method of claim 1 , wherein the boundary wordline associated with the particular wordline zone is a last wordline within the particular wordline zone.
3 . The method of claim 1 , wherein the value associated with each wordline zone in the plurality of wordline zones is associated with a program voltage.
4 . The method of claim 1 , wherein the value associated with each wordline zone in the plurality of wordline zones is a data mis-compare value.
5 . The method of claim 1 , further comprising:
detecting an ungraceful device shutdown (UGDS) event; and
initiating a find last good page (FLGP) process when power to the memory device is restored.
6 . The method of claim 5 , wherein the FLGP process includes:
determining the value stored in the non-data wordline;
identifying a wordline zone associated with the value; and
applying the FLGP process on the wordline zone associated with the value.
7 . The method of claim 1 , wherein information associated with each wordline zone of the plurality of wordline zones, including the value associated with each wordline zone, is stored in a wordline zone table.
8 . The method of claim 1 , wherein the non-data wordline is associated with a source side of the memory block.
9 . The method of claim 1 , wherein the non-data wordline is associated with a drain side of the memory block.
10 . A memory device, comprising:
a controller; and
a find last good page (FLGP) system associated with the controller, the FLGP system operable to:
identify a wordline associated with a command received from a host device;
determine whether the wordline associated with the command is in a particular position within a wordline zone, the wordline zone being associated with a value; and
based, at least in part, on determining the wordline is in the particular position within the wordline zone, storing the value associated with the wordline zone in a non-data wordline.
11 . The memory device of claim 10 , wherein the particular position of the wordline within the wordline zone is a last wordline within the wordline zone.
12 . The memory device of claim 10 , wherein the value associated with the wordline zone is associated with a program voltage.
13 . The memory device of claim 10 , wherein the value associated with the wordline zone is a data mis-compare value.
14 . The memory device of claim 10 , wherein the FLGP system is further operable to:
detect an ungraceful device shutdown (UGDS) event; and
initiate a find last good page (FLGP) process when power to the memory device is restored.
15 . The memory device of claim 14 , wherein the FLGP process includes:
determining the value stored in the non-data wordline;
identifying a wordline zone associated with the value; and
applying the FLGP process on the wordline zone associated with the value.
16 . A memory device, comprising:
means for identifying a wordline associated with a command received from a host device;
means for determining whether the wordline associated with the command is in a particular position within a wordline zone, the wordline zone being associated with a value; and
means for storing the value associated with the wordline zone in a non-data wordline.
17 . The memory device of claim 16 , wherein the particular position of the wordline within the wordline zone is a boundary wordline within the wordline zone.
18 . The memory device of claim 16 , wherein the value associated with the wordline zone is associated with a program voltage.
19 . The memory device of claim 10 , further comprising:
means for detecting an ungraceful device shutdown (UGDS) event; and
means for initiating a find last good page (FLGP) process when power to the memory device is restored.
20 . The memory device of claim 19 , wherein the means for initiating the FLGP process further comprises:
means for determining the value stored in the non-data wordline;
means for identifying a wordline zone associated with the value; and
means for applying the FLGP process on the wordline zone associated with the value.