Optical sensing module
An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.
1 . A system, comprising:
an optical sensing module suitable for wearable devices, the optical sensing module comprising:
a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising:
a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength(s) of the other laser(s) of the plurality of lasers;
an optical manipulation region, the optical manipulation region comprising an optical modulator, an optical multiplexer (MUX), or other optical manipulation elements; and
one or more optical outputs for light originating from the plurality of lasers, wherein:
the plurality of lasers is integrated onto the PIC via flip-chip die bonding or micro transfer printing; and
the plurality of lasers includes one or more lasers having a III-V RSOA gain chip or coupon that is hybrid integrated to the PIC such that an optical mode in the III-V RSOA gain chip or coupon is edge-coupled to one or more waveguides of the PIC.
2 . The system of claim 1 , wherein each of the lasers of the plurality of lasers is switchable, to switch between an on and an off configuration.
3 . The system of claim 2 , wherein, in any given time window, no more than one laser of the plurality of lasers is turned on.
4 . The system of claim 1 , wherein switching between an on and an off configuration for each laser within the plurality of lasers is carried out in a predetermined sequence.
5 . The system of claim 1 , further comprising an optical multiplexer (MUX) which directly couples the one or more optical outputs from each of the plurality of lasers directly to a single waveguide of the PIC.
6 . The system of claim 1 , further comprising a plurality of LEDs, the LEDs operating at wavelengths within the range of 400 nm to 950 nm and the plurality of lasers operating at wavelengths within the range of 1150 nm to 2500 nm, each LED operating at a wavelength which is different from the wavelength(s) of the other LED(s) of the plurality of LEDs.
7 . The system of claim 1 , wherein the optical manipulation region comprises a mirror to couple light from all of the plurality of lasers out of the optical sensing module at a single optical output.
8 . The system of claim 1 , further comprising one or more photodetectors.
9 . The system of claim 8 , wherein the one or more photodetectors comprise a plurality of photodetectors, each of the plurality of photodetectors operating over a different range of wavelengths.
10 . The system of claim 8 , wherein the one or more photodetectors are arranged to function as a spectrophotometer for diffuse reflectance generated at a sample when light from one or more of the plurality of lasers is used to illuminate the sample.
11 . The system of claim 1 , further comprising one or more of: laser driver(s), modulator driver(s), phase controller(s), TIA(s), power management IC(s), multiplexer circuit, micro-controller unit(s) (MCU), FPGA(s).
12 . The system of claim 1 , comprising both silicon waveguides and SiN waveguides.
13 . The system of claim 1 , wherein the plurality of lasers of the transmitter PIC include one or more pairs of pump and probe lasers, each of the pump and probe pairs configured to operate with a detector to form a Raman spectrometer.
14 . The system of claim 6 , wherein one or more photodetectors or LEDs are located under one or more respective microlenses and wherein one or more of the one or more microlenses comprises a thin film stack of DBR filters.
15 . The system of claim 1 , comprising a processor configured to:
apply a pre-trained algorithm to reflectance data taken at a wavelength corresponding to a water absorption peak, and
convert reflectance measurements into a predicted temperature.
16 . A system, comprising:
an optical sensing module suitable for wearable devices, the optical sensing module comprising:
a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising:
a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength(s) of the other laser(s) of the plurality of lasers;
an optical manipulation region, the optical manipulation region comprising an optical modulator, an optical multiplexer (MUX), or other optical manipulation elements; and
one or more optical outputs for light originating from the plurality of lasers; and one or more photodetectors,
wherein the one or more photodetectors are located on the transmitter PIC such that the PIC is a transmitter/receiver photonic integrated circuit, and
wherein the plurality of lasers includes one or more lasers having a III-V RSOA gain chip or coupon that is hybrid integrated to the PIC such that an optical mode in the III-V RSOA gain chip or coupon is edge-coupled to one or more waveguides of the PIC.
17 . A system, comprising:
an optical sensing module suitable for wearable devices, the optical sensing module comprising:
a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising:
a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength(s) of the other laser(s) of the plurality of lasers;
an optical manipulation region, the optical manipulation region comprising an optical modulator, an optical multiplexer (MUX), or other optical manipulation elements;
one or more optical outputs for light originating from the plurality of lasers; and one or more photodetectors,
wherein the one or more photodetectors are located separately from the transmitter photonic integrated circuit, and
wherein the plurality of lasers includes one or more lasers having a III-V RSOA gain chip or coupon that is hybrid integrated to the PIC such that an optical mode in the III-V RSOA gain chip or coupon is edge-coupled to one or more waveguides of the PIC.
18 . The system of claim 17 , wherein the one or more photodetectors are located on a separate chip that is vertically integrated and mounted on the same substrate shared with the transmitter PIC.
19 . The system of claim 17 , wherein the one or more photodetectors are located on a carrier beside the transmitter PIC.