Bubbler for use in semiconductor manufacturing process
There is provided a chemical supply device for use in a semiconductor manufacturing process, the chemical supply device including a bubbler, wherein the bubbler includes: a lower support surface including a lower concave portion; a side surface smoothly connected to the lower support surface through a corner curved portion; an upper surface extended from the side surface; an inlet extended from an outside of the upper surface to an inside of the bubbler, and configured to inject an output gas for causing a chemical solution contained in the bubbler to evaporate; and an outlet configured to transmit the chemical salutation evaporated in the bubbler, wherein a radius of curvature of the upper surface is greater than or equal to 45% and less than 58% of a diameter of the lower support surface.
1 . A chemical supply device for use in a semiconductor manufacturing process, the chemical supply device comprising a bubbler,
wherein the bubbler comprises:
a lower support surface comprising a lower concave portion formed to be concave inward the bubbler;
a side surface smoothly connected to the lower support surface through a corner curved portion;
an upper surface extended from the side surface;
an inlet extended from an outside of the upper surface to an inside of the bubbler, and configured to inject an output gas for causing a chemical solution contained in the bubbler to evaporate; and
an outlet configured to transmit the chemical salutation evaporated in the bubbler,
wherein the lower concave portion has a radius of center curvature that is greater than or equal to 28% of a diameter of the lower support surface and is less than 48% of the diameter of the lower support surface in order to increase a flow velocity of the output gas sprayed from the inlet,
wherein the inlet is disposed to have a predetermined angle with respect to the lower support surface to increase the flow velocity of the output gas, and
wherein the predetermined angle is 60° to 80° inclusive.
2 . The chemical supply device of claim 1 , wherein the bubbler is a quartz bubbler, and
wherein the corner curved portion has a curvature that is less than or equal to 23% of the diameter of the lower support surface.
3 . The chemical supply device of claim 1 , wherein, in order to reduce a remaining amount of the chemical solution, the lower concave portion has a curvature of 0.015 to 0.030 when the diameter of the lower support surface is 140 mm.
4 . The chemical supply device of claim 3 , wherein the corner curved portion has a curvature of 0.030 to 0.065 in order to reduce the remaining amount of the chemical solution.
5 . The chemical supply device of claim 4 , further comprising a constant temperature bath configured to accommodate the bubbler and to maintain a temperature of the chemical solution in the bubbler.
6 . The chemical supply device of claim 5 , further comprising a valve structure configured to transmit the output gas to the inlet from a gas system.
7 . The chemical supply device of claim 6 , wherein the output gas includes a nitrogen gas.
8 . The chemical supply device of claim 1 , wherein the evaporated chemical solution is transmitted to a diffusion furnace.
9 . An optimal bubbler structure with enhanced evaporation efficiency, the optimal bubbler structure comprising:
a lower support surface comprising a lower concave portion formed to be concave inward the bubbler;
a side surface smoothly connected to the lower support surface through a corner curved portion;
an upper surface extended from the side surface;
an inlet extended from an outside of the upper surface to an inside of the bubbler, and configured to inject an output gas for causing a chemical solution contained in the bubbler to evaporate; and
an outlet configured to transmit the chemical salutation evaporated in the bubbler,
wherein, in order to increase a flow velocity of the output gas sprayed from the inlet, the lower concave portion has a radius of center curvature that is greater than or equal to 48% and less than 49% of a diameter of the lower support surface, the corner curved portion has a radius of curvature that is greater than or equal to 22% and less than 23% of the diameter of the lower support surface, and the inlet is disposed to have an angle of 60° with respect to the lower support surface.