Graphene copper composite material preparation method based on combination of hot pressing sintering and chemical vapor deposition
A graphene copper composite material preparation method based on a combination of hot pressing sintering and chemical vapor deposition, comprising: presetting multi-layer copper foil in a hot pressing chamber; preparing a graphene thin film on the surface of the copper foil by means of a chemical vapor deposition method to obtain a graphene copper composite material; and then performing hot pressing forming on the multi-layer graphene copper foil material to prepare the graphene copper composite material. Said material can replace a traditional copper material or silver material, is applied to a supercapacitor or a motor driving device, and has the effects of improving efficiency, reducing temperature rise, etc.
1 . A graphene copper composite material preparation method, comprising:
a) presetting multi-layers of copper foils in a hot pressing chamber;
b) preparing a graphene thin film on the surface of the copper foil by means of a chemical vapor deposition process with methane as a carbon source to obtain a graphene copper raw material; and
c) performing hot pressing sintering forming on the graphene copper raw material by means of a hot pressing sintering process to obtain a graphene copper composite material,
wherein the preparation of the graphene thin film in step (b) and the hot pressing sintering process in step (c) are performed in the hot pressing chamber.
2 . The graphene copper composite material preparation method of claim 1 , wherein the spacing between layers of copper foils is controlled between 0.1 to 1 mm.
3 . The graphene copper composite material preparation method of claim 2 , wherein the copper foil has a purity of 99.9% to 99.9999%.
4 . The graphene copper composite material preparation method of claim 2 , wherein the copper foil is a rolled copper foil with an orientation of (111).
5 . The graphene copper composite material preparation method of claim 2 , wherein the copper foil has a thickness of 15 to 25 μM.
6 . The graphene copper composite material preparation method of claim 2 , wherein the method further includes the step of performing a hydrogen reduction treatment on the copper foil to remove gas adsorbed on the surface and oxide layer before depositing a graphene thin film.
7 . The graphene copper composite material preparation method of claim 1 , wherein the copper foils have a purity of 99.9% to 99.9999%.
8 . The graphene copper composite material preparation method of claim 7 , wherein the copper foil is a rolled copper foil with an orientation of (111).
9 . The graphene copper composite material preparation method of claim 7 , wherein the copper foil has a thickness of 15 to 25 μM.
10 . The graphene copper composite material preparation method of claim 7 , wherein the method further includes the step of performing a hydrogen reduction treatment on the copper foil to remove gas adsorbed on the surface and oxide layer before depositing a graphene thin film.
11 . The graphene copper composite material preparation method of claim 1 , wherein each of the copper foils is a rolled copper foil with an orientation of (111).
12 . The graphene copper composite material preparation method of claim 11 , wherein the copper foil has a thickness of 15 to 25 μM.
13 . The graphene copper composite material preparation method of claim 11 , wherein the method further includes the step of performing a hydrogen reduction treatment on the copper foil to remove gas adsorbed on the surface and oxide layer before depositing a graphene thin film.
14 . The graphene copper composite material preparation method of claim 1 , wherein the copper foil has a thickness of 15 to 25 μM.
15 . The graphene copper composite material preparation method of claim 14 , wherein the method further includes the step of performing a hydrogen reduction treatment on the copper foil to remove gas adsorbed on the surface and oxide layer before depositing a graphene thin film.
16 . The graphene copper composite material preparation method of claim 1 , wherein the method further includes the step of performing a hydrogen reduction treatment on the copper foil to remove gas adsorbed on the surface and oxide layer before depositing a graphene thin film.
17 . The graphene copper composite material preparation method of claim 1 , wherein
the vapor deposition process is performed at a temperature of 950° C. to 1020° C.; and/or,
graphene is deposited on both the upper and lower sides of the copper foil, and the number of layers of the prepared graphene thin film is optionally 1 to 5 layers; and/or,
the hot pressing sintering is performed under a hot pressing atmosphere of a high vacuum, a hot pressing temperature of 850° C. to 1050° C., and a pressure of 20 MPa to 60 MPa.
18 . The graphene copper composite material preparation method of claim 1 , wherein the total number of layers of the graphene copper composite material is 10 to 1000 layers.