IP Library Granted Patent US 12662416
Granted Patent B2
US 12662416 · App. 18/388,896 · Granted Jun 23, 2026

Quantum dot-doped glass and a method for making

Inventors: Nicholas Francis Borrelli (Elmira, NY); Anthony Paul Carapella (Campbell, NY); Aize Li (Painted Post, NY); Joseph Francis Schroeder, III (Lindley, NY); Haitao Zhang (Ithaca, NY)
Assignee: CORNING INCORPORATED
C03C14/004C03C3/089C03C14/006C09K11/02C09K11/025C09K11/883C03C2214/04C03C2214/16
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Quick Facts
Patent No.
US 12662416
App. No.
18/388,896
Granted
Jun 23, 2026
Kind
B2
Abstract

The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass that includes quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.

Claims (25)

1 . A quantum dot-doped glass comprising:

glass comprising quantum dots in pores in the glass, wherein:

(i) the glass comprises not greater than 0.1 wt % of F in a 100 nm deep layer adjacent to the external surface of the glass; and

(ii) and the quantum dots situated within the glass have a photoluminescence quantum yield of ≥10%; and

(iii) the quantum dots are 0.0001 wt % to 5 wt % of the quantum dot-doped glass, and wherein the quantum dots have a diameter of 1 nm to 50 nm.

2 . The quantum dot-doped glass of claim 1 , wherein the quantum dots have a photoluminescence quantum yield of ≥30%.

3 . The quantum dot-doped glass of claim 1 , wherein the glass comprises porous borosilicate glass.

4 . The quantum dot-doped glass of claim 1 , wherein the quantum dots have a diameter of 1 nm to 10 nm.

5 . The quantum dot-doped glass of claim 1 , wherein the glass comprises: 60 to 80 mole % SiO 2 ; 0 to 12 mole % Na 2 O, and 20 to 35 mole % B 2 O 3 .

6 . The quantum dot-doped glass of claim 5 , wherein the glass comprises: 60 to 70 mole % SiO 2 ; 0 to 10 mole % Na 2 O, and 20 to 35 mole % B 2 O 3 .

7 . The quantum dot-doped glass of claim 5 , wherein the glass comprises: 60 to 70 mole % SiO 2 ; 5 to 12 mole % Na 2 O, and 20 to 30 mole % B 2 O 3 .

8 . The quantum dot-doped glass of claim 5 , wherein the glass comprises: 60 to 70 mole % SiO 2 ; 7 to 10 mole % Na 2 O, and 20 to 30 mole % B 2 O 3 .

9 . The quantum dot-doped glass of claim 5 , wherein the quantum dots have a diameter of 1 nm to 10 nm.

10 . The quantum dot-doped glass of claim 1 , wherein the quantum dots comprise ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgTe, HgSe, HgS, InAs, InP, InSb, Si, C, Ge, PbS, PbSe, PbTe, CuInS 2 , CsPbCl 3 , CsPbBr 3 , CsPbI 3 , alloys thereof, core/shell structures of any combination thereof, or combinations thereof.

11 . A quantum dot-doped glass comprising:

glass comprising quantum dots in pores in the glass, wherein:

(i) the glass comprises not greater than 0.1 wt % of F in a 100 nm deep layer adjacent to the external surface of the glass; and

(ii) and the quantum dots situated within the glass have a photoluminescence quantum yield of ≥10%; and

(iii) the pores comprising the quantum dots are in a surface layer of the glass, the surface layer having a thickness of 1 micron to 2000 microns, and the pores having a pore size of 1 nm to 50 nm.

12 . The quantum dot-doped glass of claim 11 , wherein the quantum dots are 0.0001 wt % to 5 wt % of the quantum dot-doped glass, and wherein the quantum dots have a diameter of 1 nm to 50 nm.

13 . A quantum dot-doped glass comprising:

glass comprising quantum dots in pores in the glass, wherein:

(i) the glass comprises not greater than 0.1 wt % of F in a 100 nm deep layer adjacent to the external surface of the glass; and

(ii) and the quantum dots situated within the glass have a photoluminescence quantum yield of ≥10%; and

(iii) the quantum dots comprise CdSe/ZnS core/shell quantum dots.