Cr—Si—C-based sintered body
An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.
1 . A sintered body, consisting of:
1 to 20 wt % carbon;
20 to 70 wt % silicon; and
chromium (Cr),
wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.
2 . The sintered body according to claim 1 , wherein the sintered body includes chromium silicide and at least one selected from the group consisting of chromium carbide, silicon carbide and carbon.
3 . The sintered body according to claim 1 , wherein the sintered body has a main phase comprising at least one selected from the group consisting of CrSi, CrSi 2 and Cr 3 Si.
4 . The sintered body according to claim 1 , wherein the sintered body has an oxygen content of 1 wt % or less.
5 . The sintered body according to claim 1 , wherein the sintered body has a flexural strength of 100 MPa or more.
6 . A method for producing the sintered body of claim 1 , comprising:
mixing a gas atomization powder of chromium and silicon with a carbon source including carbon and at least one of chromium or silicon to obtain an alloy-raw-material powder; and
hot-pressing the alloy-raw-material powder in a vacuum atmosphere, at a pressure of 50 MPa or less and a baking temperature of 1350° C.-1800° C.
7 . The method according to claim 6 , wherein the carbon source comprises a carbide including at least one of chromium or silicon.
8 . A sputtering target, comprising:
the sintered body of claim 1 .
9 . A method for producing a film, comprising:
sputtering using the sputtering target of claim 8 .
10 . The sintered body according to claim 2 , wherein the sintered body has a main phase comprising at least one selected from the group consisting of CrSi, CrSi 2 and Cr 3 Si.
11 . The sintered body according to claim 2 , wherein the sintered body has an oxygen content of 1 wt % or less.
12 . The sintered body according to claim 3 , wherein the sintered body has an oxygen content of 1 wt % or less.
13 . The sintered body according to claim 2 , wherein the sintered body has a flexural strength of 100 MPa or more.
14 . The sintered body according to claim 3 , wherein the sintered body has a flexural strength of 100 MPa or more.
15 . The sintered body according to claim 4 , wherein the sintered body has a flexural strength of 100 MPa or more.
16 . The sintered body according to claim 1 , wherein the sintered body has a relative density of 90 to 95.9%.
17 . The sintered body according to claim 1 , wherein the sintered body has a porosity of 5.2 to 13%.
18 . The sintered body according to claim 1 , wherein the sintered body has a flexural strength of 180 MPa or more and 220 MPa or less.
19 . The sintered body according to claim 1 , wherein the sintered body has chromium content of more than 10 wt % and less than 79 wt %.