Silicon precursor compound, composition for forming silicon-containing film including the same, and method of forming silicon-containing film

1 . A silicon precursor compound, represented by the following Chemical Formula 1:

R 1 R 2 N—SiH 2 —N(SiR 3 R 4 R 5 ) 2 ;  [Chemical Formula 1]

wherein, in the above Chemical Formula 1,

—NR 1 R 2 includes pyrrolidine group, piperidine group, 2,6-dimethylpiperidine group, 4-methylpiperazine group or morpholine group;

R 3 is hydrogen, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, or tert-butyl group; and

each of R 4 and R 5 is independently methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, or tert-butyl group.

2 . The precursor compound of claim 1 ,

wherein —SiR 3 R 4 R 5 includes —SiHMe 2 , —SiHMeEt, —SiHMe( n Pr), —SiHMe( iso Pr), —SiHEt 2 , —SiHEt( n Pr), —SiHEt( iso Pr), —SiH( n Pr) 2 , —SiH( n Pr)( iso Pr) or —SiH( iso Pr) 2 .

3 . The precursor compound of claim 1 ,

wherein the silicon precursor compound includes the following compounds:

4 . A silicon-containing film-forming precursor composition, comprising:

a silicon precursor compound according to claim 1 .

5 . The precursor composition of claim 4 ,

wherein the silicon precursor compound includes at least one selected from the group consisting of:

6 . The precursor composition of claim 4 ,

wherein the film includes at least one selected from the group consisting of a silicon-containing oxide film, a silicon-containing nitride film, and a silicon-containing carbide film.

7 . The precursor composition of claim 4 , further comprising:

at least one nitrogen source(s) selected from the group consisting of ammonia, nitrogen, hydrazine, and dimethyl hydrazine.

8 . The precursor composition of claim 4 , further comprising:

at least one oxygen source(s) selected from the group consisting of water vapor, oxygen, and ozone.

9 . A method of forming a silicon-containing film, comprising:

forming a silicon-containing film using a film-forming precursor composition including a silicon precursor compound represented by the following Chemical Formula 1:

R 1 R 2 N—SiH 2 —N(SiR 3 R 4 R 5 ) 2 ;  [Chemical Formula 1]

wherein, in the above Chemical Formula 1:

—NR 1 R 2 includes pyrrolidine group, piperidine group, 2,6-dimethylpiperidine group, 4-methylpiperazine group, or morpholine group;

R 3 is hydrogen, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, or tert-butyl group; and

each of R 4 and R 5 is independently methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, or tert-butyl group.

10 . The method of claim 9 ,

wherein —SiR 3 R 4 R 5 includes —SiHMe 2 , —SiHMeEt, —SiHMe( n Pr), —SiHMe( iso Pr), —SiHEt 2 , —SiHEt( n Pr), —SiHEt( iso Pr), —SiH( n Pr) 2 , —SiH( n Pr)( iso Pr) or —SiH( iso Pr) 2 .

11 . The method of claim 9 ,

wherein the silicon precursor compound included in the silicon-containing film-forming precursor composition includes at least one selected from the group consisting of:

12 . The method of claim 9 ,

wherein the silicon-containing film includes at least one selected from the group consisting of a silicon-containing oxide film, a silicon-containing nitride film, and a silicon-containing carbide film.

13 . The method of claim 9 ,

wherein the silicon-containing film is deposited by chemical vapor deposition or atomic layer deposition.

14 . The method of claim 9 ,

wherein the silicon-containing film is formed in a temperature range of 100° C. to 300° C.

15 . The method of claim 9 ,

wherein a thickness of the silicon-containing film is 1 nm to 500 nm.

16 . The method of claim 9 ,

wherein the silicon-containing film is formed on a substrate including at least one trench(es) having an aspect ratio of 1 or more and a width of 1 μm or less.