CoZrTa(X) sputtering target with improved magnetic properties
The present invention relates to a sputtering target consisting of an alloy consisting of Co, Zr, Ta and, optionally, one or more further element(s) X from the group of Mo, Pd, Ni, Ti, V, W, and B, characterized in that the target has a maximum magnetic permeability μ max of 60 or lower and/or characterized in that the target has a maximum pass through flux (PTF) variation (F Max −F Min )/F Average of 0.2 or lower, preferably of 0.15 or lower, and most preferably of 0.10 or lower.
1 . Process for producing a sputtering target consisting of a cast alloy consisting of Co, Zr, Ta and, optionally, one or more further element(s) X from the group of Mo, Pd, Ni, Ti, V, W, and B, characterized in that the process involves a heat treatment of the cast alloy to a temperature in the range of 700 to 1000° C., for a time of 10 to 60 hours, and wherein the sputtering target has a maximum pass through flux (PTF) variation (F Max −F Min )/F Average of 0.2 or lower and a maximum magnetic permeability μ max of 60 or lower.
2 . Process according to claim 1 wherein the process involves a heat treatment of the cast alloy to a temperature in the range of 800 to 900° C., for a time of 12 to 48 hours.
3 . The process according to claim 1 , wherein the target has a maximum pass through flux (PTF) variation (F Max −F Min )/F Average Of 0.15 or lower.
4 . The process according to claim 1 , wherein the target has a maximum pass through flux (PTF) variation (F Max −F Min )/F Average of 0.10 or lower.
5 . The process according to claim 1 , wherein the target has a maximum magnetic permeability μ max of 50 or lower.
6 . The process according to claim 1 , wherein the target has a maximum magnetic permeability μ max of 40 or lower.
7 . The process of claim 1 , wherein Co is present in an amount of at least 75 at. %.
8 . The process of claim 1 , wherein Zr is present in an amount ranging from 2 at. % to 8 at. %.
9 . The process of claim 8 , wherein Zr is present in an amount ranging from 3 at. % to 7 at. %.
10 . The process of claim 1 , wherein Ta is present in an amount ranging from 2 at. % to 8 at. %.
11 . The process of claim 10 , wherein Ta is present in an amount ranging from 3 at. % to 7 at. %.
12 . The process of claim 1 , wherein the one or more further elements X is present in a total amount of element(s) X of up to 7 at. %.
13 . The process of claim 1 , wherein the one or more further elements X is present in a total amount of element(s) X of up to 3 at. %.
14 . The process of claim 1 , wherein only one of further element(s) X from the group of Mo, Pd, Ni, Ti, V, W, and B is present.