IP Library Granted Patent US 12662734
Granted Patent B2
US 12662734 · App. 18/146,569 · Granted Jun 23, 2026

Substrate processing method and substrate processing apparatus

Inventors: Kiyoshi Mori (Fuchu City, JP); Haruhiko Furuya (Nirasaki City, JP)
Assignee: Tokyo Electron Limited
C23C16/4412C23C16/45587C23C16/4585H01J37/32715H01J37/32752H01J37/32761
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Quick Facts
Patent No.
US 12662734
App. No.
18/146,569
Filed
Dec 27, 2022
Granted
Jun 23, 2026
Kind
B2
Art Unit
1794
USPC
118/715
Abstract

A substrate processing method includes: exhausting a first space in a processing container by an exhaust mechanism, which is configured to exhaust the first space via a gap by exhausting a second space in the processing container, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and executing the substrate processing on a substrate while causing, by a driving mechanism configured to move a stage, a position of the stage to be changed such that a width of the gap becomes uniform in a time average.

Claims (44)

1 . A substrate processing method performed in a substrate processing apparatus,

wherein the substrate processing apparatus comprises:

a processing container;

a stage disposed inside the processing container with a gap between an inner side wall of the processing container and a side surface of the stage or between a component constituting the processing container and the side surface of the stage, and configured to place a substrate on the stage, wherein the stage partitions an interior of the processing container into an upper first space, in which substrate processing is performed on the substrate, and a lower second space;

an exhaust mechanism configured to exhaust the first space via the gap by exhausting the second space, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and

a driving mechanism configured to move the stage,

wherein the substrate processing method comprises:

exhausting the first space by the exhaust mechanism; and

executing the substrate processing on the substrate while causing, by the driving mechanism, a position of the stage to be changed such that a width of the gap becomes uniform in a time average, and

wherein the act of the executing the substrate processing includes executing the substrate processing on the substrate while causing, by the driving mechanism, the stage to move such that a center point of the stage reciprocates in a reciprocating direction that rotates in a horizontal plane.

2 . The substrate processing method of claim 1 , wherein the act of the executing the substrate processing includes executing the substrate processing on the substrate while causing, by the driving mechanism, the stage to move such that the reciprocating direction rotates by a predetermined angle in the horizontal plane each time the stage reciprocates an integer number of times.

3 . The substrate processing method of claim 2 , wherein the act of executing the substrate processing includes, during the substrate processing, repeatedly executing a moving operation of changing the position of the stage by the driving mechanism a plurality of times.

4 . The substrate processing method of claim 3 , wherein the act of executing the substrate processing includes, during the substrate processing, moving the stage at a moving speed of 1 mm/sec or less by the driving mechanism.

5 . The substrate processing method of claim 4 , wherein the driving mechanism is configured to rotate the stage by rotating a support, which supports the stage, with the support as a rotation axis, and

wherein the act of executing the substrate processing includes executing the substrate processing on the substrate by rotating the stage while changing the position of the stage.

6 . The substrate processing method of claim 5 , wherein the driving mechanism includes a plurality of actuators configured to function as a parallel link mechanism to cause the stage to move in three orthogonal axial directions and in rotational directions around the three axial directions.

7 . The substrate processing method of claim 1 , wherein the act of executing the substrate processing includes, during the substrate processing, repeatedly executing a moving operation of changing the position of the stage by the driving mechanism a plurality of times.

8 . The substrate processing method of claim 1 , wherein the act of executing the substrate processing includes, during the substrate processing, moving the stage at a moving speed of 1 mm/sec or less by the driving mechanism.

9 . The substrate processing method of claim 1 , wherein the driving mechanism is configured to rotate the stage by rotating a support, which supports the stage, with the support as a rotation axis, and

wherein the act of executing the substrate processing includes executing the substrate processing on the substrate by rotating the stage while changing the position of the stage.

10 . The substrate processing method of claim 1 , wherein the act of executing the substrate processing includes executing the substrate processing on the substrate while changing the position of the stage in a state in which a support, which supports the stage, is stopped without being rotated with the support as a rotation axis.

11 . A substrate processing method performed in a substrate processing apparatus,

wherein the substrate processing apparatus comprises:

a processing container;

a stage disposed inside the processing container with a gap between an inner side wall of the processing container and a side surface of the stage or between a component constituting the processing container and the side surface of the stage, and configured to place a substrate on the stage, wherein the stage partitions an interior of the processing container into an upper first space, in which substrate processing is performed on the substrate, and a lower second space;

an exhaust mechanism configured to exhaust the first space via the gap by exhausting the second space, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and

a driving mechanism configured to move the stage, wherein the substrate processing method comprises:

exhausting the first space by the exhaust mechanism; and

executing the substrate processing on the substrate while causing, by the driving mechanism, a position of the stage to be changed such that a width of the gap becomes uniform in a time average, and

wherein the act of the executing the substrate processing includes executing the substrate processing on the substrate while causing, by the driving mechanism, the stage to move in a horizontal plane such that a trajectory along which a center point of the stage moves draws a circle in the horizontal plane.

12 . A substrate processing apparatus comprising:

a processing container;

a stage disposed inside the processing container with a gap between an inner side wall of the processing container and a side surface of the stage or between a component constituting the processing container and the side surface of the stage, and configured to place a substrate on the stage, wherein the stage partitions an interior of the processing container into an upper first space, in which substrate processing is performed on the substrate, and a lower second space;

an exhaust mechanism configured to exhaust the first space via the gap by exhausting the second space, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap;

a driving mechanism configured to move the stage; and

a controller configured to execute the substrate processing on the substrate while causing, by the driving mechanism, a position of the stage to be changed such that a width of the gap becomes uniform in a time average,

wherein the causing the position of the stage to be changed includes causing, by the driving mechanism, the stage to move such that a center point of the stage reciprocates in a reciprocating direction that rotates in a horizontal plane.

13 . A substrate processing apparatus comprising:

a processing container;

a stage disposed inside the processing container with a gap between an inner side wall of the processing container and a side surface of the stage or between a component constituting the processing container and the side surface of the stage, and configured to place a substrate on the stage, wherein the stage partitions an interior of the processing container into an upper first space, in which substrate processing is performed on the substrate, and a lower second space;

an exhaust mechanism configured to exhaust the first space via the gap by exhausting the second space, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap;

a driving mechanism configured to move the stage; and

a controller configured to execute the substrate processing on the substrate while causing, by the driving mechanism, a position of the stage to be changed such that a width of the gap becomes uniform in a time average,

wherein the causing the position of the stage to be changed includes causing, by the driving mechanism, the stage to move in a horizontal plane such that a trajectory along which a center point of the stage moves draws a circle in the horizontal plane.