Manufacturing method for graphene film
An exemplary embodiment of the present invention can provide a method of manufacturing a graphene film, including preparing a substrate including a carbon layer in a chamber, and forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.
1 . A method of manufacturing a graphene film, the method comprising:
preparing a silicon oxide wafer substrate comprising a carbon layer in a chamber; and
forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate,
wherein:
in the forming of a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate, the substrate is maintained at a temperature ranging from 400° C. to 600° C., and
in the applying of a positive voltage pulse to the substrate, a duty cycle of the positive voltage pulse ranges from 0.5% to 60%,
wherein the preparing of a substrate comprising a carbon layer in the chamber comprises:
arranging a sample plate in the chamber, and forming the carbon layer on an upper surface of the sample plate,
wherein the sample plate is mounted on a sample table in the chamber and the carbon layer is formed on the upper surface of the sample plate by using a sputter gun,
wherein the forming of plasma in the chamber is performed at a degree of vacuum ranging from 1 m Torr to 100 mTorr, and
wherein a frequency of the positive voltage pulse ranges from 1 kHz to 10 kHz.
2 . The method of claim 1 , wherein:
the positive voltage pulse voltage ranges from 200 V to 2 KV to the substrate.
3 . The method of claim 1 , wherein:
the forming of plasma in the chamber
is performed in an inert gas atmosphere.
4 . The method of claim 3 , wherein:
the inert gas is one or more selected from hydrogen (H2), helium (He), neon (Ne) or argon (Ar).
5 . The method of claim 1 , wherein:
the forming of a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate is
one selected from forming plasma in the chamber and then applying the positive voltage pulse to the substrate, applying the positive voltage pulse to the substrate and then forming plasma in the chamber or forming plasma in the chamber and applying the positive voltage pulse to the substrate at the same time.