Silicon single crystal growing method
There is provided a growing method of monocrystalline silicon including: pulling up monocrystalline silicon from a dopant-added melt in which a dopant is added to a silicon melt and growing the monocrystalline silicon according to Czochralski process, in which the monocrystalline silicon is grown by calculating a critical CV value, which is a product of a dopant concentration C and a pull-up speed V at a point of time when an abnormal growth occurred in the monocrystalline silicon; and controlling at least one of the dopant concentration C or the pull-up speed V to make a CV value, which is a product of the dopant concentration C and the pull-up speed V at the point of time, below the critical CV value.
1 . A growing method of pulling up monocrystalline silicon from a dopant-added melt in which a dopant is added to a silicon melt and growing the monocrystalline silicon according to a Czochralski process, the growing method comprising:
in a case that an abnormal growth occurs in the monocrystalline silicon, calculating a critical CV value, which is a product of a dopant concentration C and a pull-up speed V at a solidification rate at a point of time when the abnormal growth occurs, and creating a critical CV value profile;
creating a target CV value profile by using a target CV value that is less than 90% and equal to or more than 50% of the critical CV value at each solidification rate in the critical CV value profile, and
resetting at least one of a pull-up speed profile or a resistivity profile in a crystal axis direction to make a CV value, which is a product of the dopant concentration C and the pull-up speed V at each solidification rate of the monocrystalline silicon, satisfy the target CV value at each solidification rate in the target CV value profile.
2 . The growing method according to claim 1 ,
wherein the resetting comprises creating a modified pull-up speed profile constituted by a pull-up speed corresponding to the target CV value profile.
3 . The growing method according to claim 1 ,
wherein the resetting comprises creating a modified resistivity profile constituted by a resistivity corresponding to the target CV value profile.
4 . The growing method according to claim 1 ,
wherein the dopant concentration C is a dopant concentration in the monocrystalline silicon, and
the dopant concentration in the monocrystalline silicon is calculated from a resistance value of the monocrystalline silicon by using a relational expression of the dopant concentration in the monocrystalline silicon and the resistivity of the monocrystalline silicon.