Analog memory for photonic circuits
Embodiments of the present disclosure are directed to an integrated circuit with a photonic processor and an electrical analog memory. The integrated circuit further includes an array of photonic intensity modulators coupled to the photonic processor via a first set of optical connections, and an array of photodetectors coupled to the photonic processor via a second set of optical connections. The electrical analog memory is directly coupled to the array of photodetectors and the array of photonic intensity modulators.
1 . An integrated circuit, comprising:
a photonic processor;
an array of photonic intensity modulators coupled to the photonic processor via a first set of optical connections;
an array of photodetectors coupled to the photonic processor via a second set of optical connections; and
an electrical analog memory directly connected to the array of photodetectors via a first set of electrical connections and directly connected to the array of photonic intensity modulators via a second set of electrical connections,
wherein the electrical analog memory comprises a two-dimensional array of analog memory cells organized in a plurality of rows of analog memory cells and a plurality of columns of analog memory cells,
wherein each row of the plurality of rows of analog memory cells is directly connected to a respective photonic intensity modulator from the array of photonic intensity modulators via a respective electrical connection of the second set of electrical connections, and
wherein each photodetector from the array of photodetectors is directly connected to a respective row of the plurality of rows of analog memory cells via a respective electrical connection of the first set of electrical connections.
2 . The integrated circuit of claim 1 , wherein the electrical analog memory comprises at least one of a volatile electrical analog memory and non-volatile electrical analog memory.
3 . The integrated circuit of claim 1 , wherein the photonic processor is configured to execute a plurality of instructions at a latency determined based on at least one of a first speed of write-in to the electrical analog memory and a second speed of read-out from the electrical analog memory.
4 . The integrated circuit of claim 1 , wherein the photonic processor is configured to have a total computational time dependent upon at least one of a write-in time of the electrical analog memory and a read-out time of the electrical analog memory.
5 . The integrated circuit of claim 1 , wherein at least one electrical analog memory cell of the electrical analog memory coupled to a photodetector in the array of photodetectors and a photonic intensity modulator in the array of photonic intensity modulators operate as a photonic flip-flop circuit.
6 . The integrated circuit of claim 5 , wherein the photonic flip-flop circuit coupled to at least one photonic logic gate of the photonic processor operates as a photonic sequential circuit.
7 . The integrated circuit of claim 5 , wherein the photonic flip-flop circuit coupled to at least one photonic adder of the photonic processor operates as a photonic counter circuit.
8 . The integrated circuit of claim 1 , wherein a pair of electrical analog memory cells of the electrical analog memory, a pair of photodetectors in the array of photodetectors coupled to at least one photonic adder of the photonic processor, and a pair of photonic intensity modulators in the array of photonic intensity modulators operate as a photonic Fibonacci circuit.
9 . The integrated circuit of claim 1 , wherein the array of photodetectors is coupled to at least one input of the electrical analog memory via a first set of electrical connections, and at least one output of the electrical analog memory is coupled to the array of photonic intensity modulators via a second set of electrical connections.
10 . The integrated circuit of claim 1 , wherein the array of photonic intensity modulators is configured to generate at least one optical signal for the photonic processor using at least one analog electrical signal received from the electrical analog memory.
11 . The integrated circuit of claim 1 , wherein the array of photodetectors is configured to generate at least one analog electrical signal using at least one optical signal generated by the photonic processor, the at least one analog electrical signal directly input into the electrical analog memory.
12 . The integrated circuit of claim 1 , further comprising:
at least one analog-to-digital converter (ADC) coupled to the array of photodetectors via a first set of electrical connections, the at least one ADC configured to receive a plurality of digital electrical signals from the array of photodetectors and generate at least one digital electrical output;
an array of digital-to-analog converters (DACs) coupled to the array of photonic intensity modulators via a second set of electrical connections, the array of DACs configured to receive a plurality of digital electrical inputs and generate a plurality of analog electrical inputs for the array of photonic intensity modulators; and
a digital memory coupled between the at least one ADC and the array of DACs.
13 . The integrated circuit of claim 1 , further comprising an optical memory directly coupled to the photonic processor via a third set of optical connections.
14 . The integrated circuit of claim 1 , wherein the array of photonic intensity modulators comprises at least one of: an array of electro-optic effect modulators, an array of carrier-depletion effect modulators, and an array of thermo-optic effect modulators.
15 . The integrated circuit of claim 1 , wherein the integrated circuit is implemented as a silicon photonics platform.