Semiconductor photonics device and methods of formation for specific photonics construction and structure
A semiconductor photonics device may include a photonic integrated circuit and may be coupled with an output optical fiber at a top surface of the semiconductor photonics device. To facilitate coupling of modulated optical signals to the output optical fiber at the top surface of the semiconductor photonics device, the semiconductor photonics device may include a mirror structure that is supported by a semiconductor support structure included in the semiconductor photonics device. The mirror structure may be positioned at an angle relative to a surface of a semiconductor substrate of the semiconductor photonics device, which enables the mirror structure to transfer a modulated optical signal propagating in a first direction to a second direction toward the output optical fiber.
1 . A semiconductor photonics device, comprising:
a semiconductor substrate;
a dielectric region above the semiconductor substrate;
an optical modulator in the dielectric region;
one or more waveguides in the dielectric region,
wherein the one or more waveguides are optically coupled with the optical modulator;
a mirror structure, in the dielectric region, configured to receive a modulated optical signal from the one or more waveguides,
wherein the mirror structure is configured to redirect the modulated optical signal from a first direction, that is approximately parallel with a top surface of the semiconductor substrate, to a second direction that is approximately perpendicular to the first direction; and
a grating coupler configured to direct an input optical signal from the second direction to the first direction.
2 . The semiconductor photonics device of claim 1 , wherein the mirror structure is configured to direct the modulated optical signal toward an output optical fiber coupled with the semiconductor photonics device.
3 . The semiconductor photonics device of claim 1 , wherein the one or more waveguides comprise:
a semiconductor waveguide adjacent to the optical modulator; and
a dielectric waveguide adjacent to the mirror structure.
4 . The semiconductor photonics device of claim 3 , wherein a top surface of the mirror structure is located at a higher second direction location in the dielectric region than a top surface of the dielectric waveguide; and
wherein a bottom surface of the mirror structure is located at a lower second direction location in the dielectric region than a bottom surface of the dielectric waveguide.
5 . The semiconductor photonics device of claim 1 , wherein an angle of the mirror structure, relative to the top surface of the semiconductor substrate, is included in a range of approximately 40 degrees to approximately 50 degrees.
6 . The semiconductor photonics device of claim 1 , wherein the mirror structure comprises an aluminum copper (AlCu) mirror structure.
7 . The semiconductor photonics device of claim 1 , wherein the mirror structure comprises:
a first plurality of layers having a first refractive index; and
a second plurality of layers, alternating with the first plurality of layers, having a second refractive index.
8 . The semiconductor photonics device of claim 1 , wherein a thickness of the mirror structure is included in a range of approximately 5 angstroms to approximately 1 micron.
9 . A semiconductor photonics device, comprising:
a semiconductor substrate;
a dielectric region above the semiconductor substrate;
an optical modulator in the dielectric region;
one or more waveguides in the dielectric region,
wherein the one or more waveguides are optically coupled with the optical modulator;
a semiconductor support structure on the semiconductor substrate and in the dielectric region;
a mirror structure, over the semiconductor support structure in the dielectric region, configured to receive a modulated optical signal from the one or more waveguides,
wherein the mirror structure is configured to redirect the modulated optical signal from a first direction, that is approximately parallel with a top surface of the semiconductor substrate, to a second direction that is approximately perpendicular to the first direction; and
a grating coupler configured to direct an input optical signal from the second direction to the first direction.
10 . The semiconductor photonics device of claim 9 , wherein the semiconductor support structure has a (011) crystal grain orientation.
11 . The semiconductor photonics device of claim 9 , wherein the mirror structure is located over an angled sidewall of the semiconductor support structure.
12 . The semiconductor photonics device of claim 11 , wherein the mirror structure is positioned at an angle relative to the top surface of the semiconductor substrate; and
wherein the angle of the mirror structure corresponds to an angle of the angled sidewall of the semiconductor support structure.
13 . The semiconductor photonics device of claim 9 , further comprising:
an oxide barrier layer between the semiconductor support structure and the mirror structure.
14 . A method, comprising:
forming, in a semiconductor layer above a first portion of a dielectric region, an optical modulator and a first waveguide of a semiconductor photonics device;
forming, in a second portion of the dielectric region, a second waveguide of the semiconductor photonics device above the first waveguide;
forming a recess in the dielectric region adjacent to the second waveguide,
wherein a portion of a semiconductor substrate below the dielectric region is exposed through the recess;
forming a semiconductor support structure on the portion of the semiconductor substrate in the recess;
forming a mirror structure over an angled sidewall of the semiconductor support structure; and
filling the recess with a dielectric material over the semiconductor support structure and over the mirror structure.
15 . The method of claim 14 , further comprising:
forming an oxide barrier layer on the angled sidewall of the semiconductor support structure.
16 . The method of claim 15 , wherein forming the mirror structure comprises:
forming the mirror structure on the oxide barrier layer over the angled sidewall of the semiconductor support structure.
17 . The method of claim 14 , wherein forming the semiconductor support structure comprises:
epitaxially growing the semiconductor support structure on the portion of the semiconductor substrate that is exposed through the recess.
18 . The method of claim 14 , wherein forming the semiconductor support structure comprises:
forming the semiconductor support structure such that the semiconductor support structure has a trapezoidal cross-sectional profile.
19 . The method of claim 14 , wherein forming the semiconductor support structure comprises:
forming the semiconductor support structure such that the semiconductor support structure has a (011) crystal grain orientation.
20 . The method of claim 14 , wherein forming the semiconductor support structure comprises:
forming the semiconductor support structure such that an angle of the angled sidewall, relative to a top surface of the semiconductor substrate, is included in a range of approximately 40 degrees to approximately 50 degrees.