Deep-etched electro-optic waveguide modulator with non-constant waveguide width
In some implementations, an electro-optic waveguide modulator includes a deep-etched waveguide. A first cladding is disposed on a top surface of the deep-etched waveguide. A second cladding is disposed on a bottom surface of the deep-etched waveguide. The deep-etched waveguide has a length that extends in a first direction and a width that extends in a second direction. The width of the deep-etched waveguide is non-constant along at least a portion of the length of the deep-etched waveguide. For example, a difference between a maximum width of the deep-etched waveguide and a minimum width of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide satisfies a width difference threshold that is equal to 10% of the maximum width.
1 . An electro-optic waveguide modulator, comprising:
a deep-etched waveguide;
a first cladding that is disposed on a top surface of the deep-etched waveguide; and
a second cladding that is disposed on a bottom surface of the deep-etched waveguide, wherein:
the deep-etched waveguide has a length that extends in a first direction and a width that extends in a second direction, and
the width of the deep-etched waveguide is non-constant along at least a portion of the length of the deep-etched waveguide.
2 . The electro-optic waveguide modulator of claim 1 , wherein the deep-etched waveguide comprises a material that includes at least one of indium phosphide (InP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), lithium niobate (LiNbO 3 ), silicon (Si), indium antimonide (InSb), gallium antimonide (GaSb), indium arsenide (InAs), or gallium phosphide (GaP).
3 . The electro-optic waveguide modulator of claim 1 , wherein no cladding is disposed on sidewalls of the deep-etched waveguide.
4 . The electro-optic waveguide modulator of claim 1 , wherein a passivation layer is disposed on each sidewall of the deep-etched waveguide.
5 . The electro-optic waveguide modulator of claim 1 , wherein a difference between a maximum width of the deep-etched waveguide and a minimum width of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide satisfies a width difference threshold that is equal to 10% of the maximum width.
6 . The electro-optic waveguide modulator of claim 1 , wherein a sidewall of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide is at least one of tapered, curved, corrugated, or rough.
7 . The electro-optic waveguide modulator of claim 1 , wherein the deep-etched waveguide includes a core that is disposed within a central region of the deep-etched waveguide.
8 . An electro-optic waveguide modulator, comprising:
a deep-etched waveguide, wherein:
the deep-etched waveguide has a length that extends in a first direction and a width that extends in a second direction, and
a difference between a maximum width of the deep-etched waveguide and a minimum width of the deep-etched waveguide along at least a portion of the length of the deep-etched waveguide satisfies a width difference threshold that is equal to 10% of the maximum width.
9 . The electro-optic waveguide modulator of claim 8 , further comprising:
a first cladding that is disposed on a top surface of the deep-etched waveguide; and
a second cladding that is disposed on a bottom surface of the deep-etched waveguide.
10 . The electro-optic waveguide modulator of claim 8 , wherein no cladding is disposed on sidewalls of the deep-etched waveguide.
11 . The electro-optic waveguide modulator of claim 8 , wherein a passivation layer is disposed on each sidewall of the deep-etched waveguide.
12 . The electro-optic waveguide modulator of claim 8 , wherein the deep-etched waveguide comprises a material that includes at least one of indium phosphide (InP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), lithium niobate (LiNbO 3 ), silicon (Si), indium antimonide (InSb), gallium antimonide (GaSb), indium arsenide (InAs), or gallium phosphide (GaP).
13 . The electro-optic waveguide modulator of claim 8 , wherein a sidewall of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide is angled with respect to the first direction.
14 . The electro-optic waveguide modulator of claim 8 , wherein a sidewall of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide is curved with respect to the first direction.
15 . An electro-optic device, comprising:
an electro-optic waveguide modulator with a deep-etched waveguide, wherein:
the deep-etched waveguide has a length that extends in a first direction and a width that extends in a second direction, and
the width of the deep-etched waveguide is non-constant along at least a portion of the length of the deep-etched waveguide.
16 . The electro-optic device of claim 15 , wherein the electro-optic device is a Mach Zehnder modulator chip.
17 . The electro-optic device of claim 15 , further comprising a first combiner and a second combiner, wherein:
the electro-optic waveguide modulator is configured to receive light from the first combiner, to propagate the light via the deep-etched waveguide, and to provide the light to the second combiner.
18 . The electro-optic device of claim 15 , further comprising another electro-optic waveguide modulator with another deep-etched waveguide, wherein:
the other deep-etched waveguide has a length that extends in the first direction and a width that extends in the second direction, and
the width of the other deep-etched waveguide is non-constant along at least a portion of the length of the other deep-etched waveguide.
19 . The electro-optic device of claim 15 , wherein a sidewall of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide is at least one of tapered, curved, corrugated, or rough.
20 . The electro-optic device of claim 15 , wherein the deep-etched waveguide comprises a material that includes at least one of indium phosphide (InP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), lithium niobate (LiNbO 3 ), silicon (Si), indium antimonide (InSb), gallium antimonide (GaSb), indium arsenide (InAs), or gallium phosphide (GaP).