Planarizing agent for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

1 . A composition for forming an organic film, comprising:

a resin for forming an organic film;

a planarizing agent for forming an organic film; and

a solvent, wherein

the resin for forming an organic film has at least one aromatic skeleton, wherein

the planarizing agent for forming an organic film, consists of at least one aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein

the composition for forming an organic film is a blended composition formed by blending a preliminary composition containing the resin for forming an organic film and the solvent, with the planarizing agent for forming an organic film, wherein

the preliminary composition has a complex viscosity of 1.0 Pa· 3 s or more in a temperature range of 175° C. or higher, and

the blended composition has a complex viscosity of less than 1.0 Pa·s in a temperature range of 175° C. or higher; and

wherein the planarizing agent for forming an organic film is one or more compounds selected from the general formulae (I) or (II),

wherein R 1 each independently represents a hydrogen atom, a hydroxy group, or an optionally substituted organic group having 1 to 10 carbon atoms: W 1 represents a phenylene group or a divalent group represented by the following general formula (I-1); W 2 and W 3 represent a single bond or any one divalent group represented by the following general formula (I-2); m 1 represents an integer of 2 to 10: and n 1 each independently represents an integer of 0 to 5; and when W 2 and W 3 are both carbonyl groups in the formula (I- 2 ), W 1 represents a phenylene group and m 1 is 2 or 3,

wherein “*” represents a bonding position; R 10 , R 11 , R 12 , and R 13 represent a hydrogen atom, a hydroxy group, or an organic group having 1 to 10 carbon atoms; W 10 and W 11 each independently represent a single bond or a carbonyl group; m 10 and m 11 represent an integer of 0 to 10, and m 10 +m 11 ≥1,

wherein “*” represents a bonding position,

wherein R 2 each independently represents a hydrogen atom or an optionally substituted organic group having 1 to 10 carbon atoms; W 4 represents a divalent group represented by the following general formula (II-1); W 5 represents a single bond or any one divalent group represented by the following general formula (II-2); m 2 represents an integer of 5 to 10; and n 3 represents an integer of 0 to 5,

wherein “*” represents a bonding position; R 20 , R 21 , R 22 , and R 23 represent a hydrogen atom, a hydroxy group, or an organic group having 1 to 10 carbon atoms; m 20 and m 21 represent an integer of 0 to 10; and m 20 +m 21 ≥ 1,

wherein “** represents a bonding position.

2 . The composition for forming an organic film according to claim 1 , wherein the resin for forming an organic film has at least one aromatic skeleton selected from the group consisting of benzene, naphthalene, and fluorene.

3 . A method for forming an organic film functioning as an organic planarizing film used in a semiconductor device manufacturing process, comprising:

applying the composition for forming an organic film according to claim 1 on a substrate to be processed by spin-coating; and

heat-treating the substrate coated with the composition for forming an organic film within a range of a temperature of 100° C. or higher and 600° C. or lower for 10 to 600 seconds to form a cured film.

4 . A method for forming an organic film functioning as an organic planarizing film used in a semiconductor device manufacturing process, comprising:

applying the composition for forming an organic film according to claim 1 on a substrate to be processed by spin-coating;

heat-treating the substrate coated with the composition for forming an organic film within a range of a temperature of 100° C. or higher and 350° C. or lower for 10 to 600 seconds; and

further heat-treating the substrate within a range of a temperature of 100° C. or higher and 600° C. or lower for 10 to 600 seconds to form a cured film.

5 . The method for forming an organic film according to claim 3 , wherein a substrate to be processed having a structure or step with 20 nm or more in height is used as the substrate to be processed.

6 . A patterning process comprising:

forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;

forming a resist intermediate film on the organic film by using a resist intermediate film material having a silicon atom;

forming a resist upper layer film on the resist intermediate film by using a resist upper layer film material composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the resist intermediate film by etching while using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching while using the resist intermediate film having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching while using the organic film having the transferred pattern as a mask.

7 . A patterning process comprising:

forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;

forming a resist intermediate film on the organic film by using a resist intermediate film material having a silicon atom;

forming an organic anti-reflective film or an adhesive film on the resist intermediate film;

forming a resist upper layer film on the organic anti-reflective film or the adhesive film by using a resist upper layer film material composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic anti-reflective film or the adhesive film, and the resist intermediate film by etching while using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching while using the resist intermediate film having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching while using the organic film having the transferred pattern as a mask.

8 . A patterning process comprising:

forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;

forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;

forming a resist upper layer film on the inorganic hard mask by using a resist upper layer film material composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the inorganic hard mask by etching while using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching while using the organic film having the transferred pattern as a mask.

9 . A patterning process comprising:

forming an organic film on a body to be processed by using the composition for forming an organic film according to claim 1 ;

forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;

forming an organic anti-reflective film or an adhesive film on the inorganic hard mask;

forming a resist upper layer film on the organic anti-reflective film or the adhesive film by using a resist upper layer film material composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic anti-reflective film or the adhesive film, and the inorganic hard mask by etching while using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching while using the organic film having the transferred pattern as a mask.

10 . The patterning process according to claim 8 , wherein the inorganic hard mask is formed by a CVD method or an ALD method.

11 . The patterning process according to claim 6 , wherein the circuit pattern is formed by a lithography using light having a wavelength of 10 nm or more and 300 nm or less, a direct writing with electron beam, nanoimprinting, or a combination thereof.

12 . The patterning process according to claim 6 , wherein the circuit pattern is developed with an alkaline development or an organic solvent.

13 . The patterning process according to claim 6 , wherein the body to be processed is a semiconductor device substrate or a film formed on the semiconductor device substrate which is any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film.

14 . The patterning process according to claim 13 , wherein a metal constituting the body to be processed is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof.