Resist underlayer film-forming composition
A resist underlayer film forming composition wherein a flat film forms exhibiting high etching resistance, a good dry etching rate ratio and optical constant, has good coverage, and a small difference in film thickness after embedding. Also included are a resist underlayer film using the resist underlayer film forming composition; and a method for producing a semiconductor apparatus. This resist underlayer film forming composition includes: at least one compound of formula (A); at least one polymer of formula (B); and a solvent. (In formula (A), X represents a C2-C50 n-valent organic group, and n Y's represent a C6-C60 aromatic hydrocarbon group having at least one hydroxyl group, n represents an integer of 1-4.) [In formula (B), R1 represents a hydrogen atom or methyl group, and R2 represents at least one group from formulae (B-1) to (B-3). (In formulae (B-1) to (B-3), * represents a bond with an adjacent oxygen atom.)]
1 . A method for producing a semiconductor device, comprising the steps of:
forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n represents an integer of 1 to 4,
wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents at least one group selected from the following formulae (B-1) to (B-3):
wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
forming a resist film on the formed resist underlayer film;
irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and
processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.
2 . The method for producing the semiconductor device according to claim 1 , wherein the resist underlayer film is a baked product of an applied film comprising the resist underlayer film-forming composition.
3 . A method for producing a stepped semiconductor device, comprising the steps of:
forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
wherein X represents an n-valent organic group having 2 to 50 carbon atoms, and has at least one benzene ring, naphthalene ring, anthracene ring, or pyrene ring or a combination thereof, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n represents an integer of 1 to 4,
wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents at least one group selected from the following formulae (B-1) to (B-3):
wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
forming a resist film on the formed resist underlayer film;
irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and
processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.
4 . The method for producing the semiconductor device according to claim 3 , wherein the resist underlayer film is a baked product of an applied film comprising the resist underlayer film-forming composition.
5 . A method for producing a stepped semiconductor device, comprising the steps of:
forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and has a benzene ring, a naphthalene ring, an anthracene ring, or a pyrene ring, each having at least one hydroxy group, or a combination thereof, and n represents an integer of 1 to 4,
wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents at least one group selected from the following formulae (B-1) to (B-3):
wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
forming a resist film on the formed resist underlayer film;
irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and
processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.
6 . The method for producing the semiconductor device according to claim 5 , wherein the resist underlayer film is a baked product of an applied film comprising the resist underlayer film-forming composition.
7 . A method for producing a stepped semiconductor device, comprising the steps of:
forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent:
wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n is 2,
wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents at least one group selected from the following formulae (B-1) to (B-3):
wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
forming a resist film on the formed resist underlayer film;
irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and
processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.
8 . The method for producing the semiconductor device according to claim 7 , wherein the resist underlayer film is a baked product of an applied film comprising the resist underlayer film-forming composition.
9 . A method for producing a stepped semiconductor device, comprising the steps of:
forming a resist underlayer film on a stepped semiconductor substrate using a resist underlayer film-forming composition comprising at least one compound represented by the following formula (A), at least one polymer consisting of unit structures represented by the following formula (B), and a solvent having a boiling point of 160° C. or higher:
wherein X represents an n-valent organic group having 2 to 50 carbon atoms, each of n quantity of Y independently represents an aromatic hydrocarbon group having 6 to 60 carbon atoms and having at least one hydroxy group, and n represents an integer of 1 to 4,
wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents at least one group selected from the following formulae (B-1) to (B-3):
wherein, in formulae (B-1) to (B-3), * represents a bonding site to the adjacent oxygen atom;
forming a resist film on the formed resist underlayer film;
irradiating the formed resist film with a light or an electron beam and subjecting the resultant resist film to development to form a resist pattern;
etching the resist underlayer film through the formed resist pattern to form a patterned resist underlayer film; and
processing the stepped semiconductor substrate through the patterned resist underlayer film, wherein the processing is conducted by dry etching.
10 . The method for producing the semiconductor device according to claim 9 , wherein the resist underlayer film is a baked product of an applied film comprising the resist underlayer film-forming composition.