Apparatus and method for treating substrate
The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.
1 . A method for treating a substrate, the method comprising:
a first treatment step of hydrophobicizing a surface of a first substrate such that the surface of the first substrate has a first hydrophobic property, by supplying a hydrophobic gas to the first substrate at a flow rate and through a supply tube inserted into a central hole included in a flow forming plate, the flow forming plate being in a chamber and dividing a process space of the chamber into an upper space and a lower space, a bottom of the flow forming plate and a lower end of the supply tube being at a same height;
a second treatment step of hydrophobicizing a surface of a second substrate such that the surface of the second substrate has a second hydrophobic property, by supplying the hydrophobic gas to the second substrate at the flow rate through the supply tube, and
an exhaust step of releasing process by-products through a plurality of exhaust holes included in an edge region of the flow forming plate, wherein
the first hydrophobic property and the second hydrophobic property is configured to have different degrees of hydrophobization by controlling a first distance between a dispensing end through which the hydrophobic gas is dispensed and the first substrate in the first treatment step to be different from a second distance between the dispensing end through which the hydrophobic gas is dispensed and the second substrate in the second treatment step,
the first substrate is a substrate different from the second substrate, and
the controlling the first distance to be different from the second distance includes causing the first substrate and the second substrate to be raised or lowered on a support plate within a substrate treating apparatus.
2 . The method of claim 1 , wherein
the first hydrophobic property has a higher degree of hydrophobization than the second hydrophobic property, and
the first distance is smaller than the second distance.
3 . The method of claim 2 , wherein the first treatment step and the second treatment step are performed in a same chamber.
4 . The method of claim 3 , wherein the dispensing end through which the hydrophobic gas is dispensed faces the support plate configured to support the first substrate and the second substrate and is located to overlap the support plate when viewed from above.
5 . The method of claim 4 , wherein the dispensing end is located to face a center of the first substrate and a center of the second substrate.
6 . The method of claim 1 , wherein the hydrophobic gas includes a hexamethyldisilane (HMDS) gas.