IP Library Granted Patent US 12,663,730
Granted Patent B2
US 12,663,730 · App. 18/629,615 · Granted Jun 23, 2026

Front-to-back overlay (FTBO) standard

Inventors: Keith F. Best (Andover, MA); Corey Robert Shay (Amherst, NH); Jyr Hong Soo (Princeton, NJ)
Assignee: Onto Innovation Inc.
G03F7/706845G03F7/70633G03F7/70683G03F7/706839
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,663,730
App. No.
18/629,615
Granted
Jun 23, 2026
Kind
B2
Abstract

Various examples herein describe an apparatus and related method to calibrate two in-line lithographic tools used as part of in-line, panel-production equipment. The two lithographic tools are used to expose opposing sides of a panel or substrate, such as, for example, an Advanced Integrated Circuit Substrates (AICS) panel or another type of panel or substrate, such as a copper-clad laminate (CCL) panel). The panel may be, for example, a flat-panel display or another substrate type. Other systems, apparatuses, and methods are also disclosed.

Claims (54)

1 . A method for calibrating two in-line lithographic tools having a substrate flipper unit located therebetween, the method comprising:

subsequently placing a metrology-standard panel (MSP) in each of the two lithographic tools;

mapping locations of patterned holes of the MSP to locations as determined by a first lithographic tool and a second lithographic tool, respectively, to produce a first set of locational data and a second set of locational data;

forming a film on both a first side and a second side of the MSP;

exposing portions of the first side of the MSP in the first lithographic tool and the second side of the MSP in the second lithographic tool, respectively;

measuring an overlay error for each of the first side and the second side between the patterned holes on the MSP to the exposed portions of the film formed on the MSP by respective ones of the two lithographic tools; and

adjusting a grid on each of the two lithographic tools to match the patterned grid on the MSP to produce a respective calibrated version of each of the two lithographic tools, thereby producing a set of calibration data for each of the two lithographic tools for compensating for respective ones of the measured overlay errors.

2 . The method of claim 1 , wherein the MSP is formed in a glass plate having a thickness equal to about 100 μm to about 3000 μm.

3 . The method of claim 1 , wherein the MSP is formed to include an array of patterned holes, the patterned holes being formed to traverse a thickness of the MSP from the first side to the second side of the MSP.

4 . The method of claim 3 , wherein the patterned holes of the MSP are aligned from the first side to the second side within ±1 microns.

5 . The method of claim 1 , further comprising:

aligning the first lithographic tool to global alignment targets on the first side of the MSP prior to exposing the MSP on the first side; and

aligning the second lithographic tool to global alignment targets on the second side of the MSP prior to exposing the MSP on the second side.

6 . The method of claim 1 , further comprising calibrating at least one of the first lithographic tool and the second lithographic tool for at least one of inter-field x-y scaling adjustment and intra-field x-y scaling adjustment.

7 . The method of claim 1 , further comprising entering each of the sets of the calibration data into a software-based litho tool-matching model to compensate for overlay errors in respective ones of the two lithographic tools.

8 . The method of claim 1 , for each of the two lithographic tools, further comprising modeling each set of the locational data to determine overlay correction data, respectively, of actual hole locations in the MSP to the locations determined by each of the first lithographic tool and the second lithographic tool.

9 . The method of claim 8 , further comprising:

applying the modeled sets of the overlay correction, respectively, to the first lithographic tool and the second lithographic tool;

exposing a structure onto a first film on the first side of the MSP on the first lithographic tool;

flipping the MSP;

exposing a structure onto a second film on the second side of the MSP on the second lithographic tool; and

developing the first film and the second film on each side of the MSP.

10 . The method of claim 9 , further comprising:

measuring an overlay error between the developed structures on the first side of the MSP to a planned location of the exposed structure on the first side of the MSP; and

measuring an overlay error between the developed structures on the second side of the MSP to a planned location of the exposed structure on the second side of the MSP, the measuring of the overlay error on each side of the MSP for determining whether a final version of measured results of the overlay error meet pre-determined specifications.

11 . A method for calibrating two tools, the method comprising:

placing a metrology-standard panel (MSP) in a first tool;

mapping locations of patterned holes in the MSP to locations on a first side of the MSP as determined by the first tool to produce a first set of locational data;

placing the MSP in a second tool;

mapping locations of patterned holes in the MSP to locations on a second side of the MSP as determined by the second tool to produce a second set of locational data;

determining an overlay correction based on the first and second set of locational data, the overlay correction being a difference between the locations of each of the patterned holes and the locations of each of the patterned holes, respectively, as determined by the first and second tools; and

adjusting a grid on each of the tools based on the overlay correction, thereby producing a set of calibration data for each of the two tools for compensating for respective overlay errors.

12 . The method of claim 11 , further comprising:

forming a film on at least one side of the MSP;

exposing a plurality of structures onto the film on the MSP, locations of the plurality of structures corresponding to at least some of the locations of the patterned holes in the MSP; and

measuring an overlay error as a difference between each of the patterned holes on the MSP to a respective one of the exposed plurality of structures on the film formed on the MSP.

13 . The method of claim 12 , further comprising:

producing calibrated versions of the first tool and second tool based on applying the measured overlay error; and

producing a set of calibration data for the first tool and second tool, respectively, for compensating for respective ones of the measured overlay errors.

14 . The method of claim 12 , wherein the producing of the calibrated versions of the first tool and second tool includes entering the set of calibration data into a model to include adjustments of at least one of an inter-field x-y scaling adjustment and an intra-field x-y scaling adjustment.

15 . The method of claim 12 , wherein the measuring of the overlay error includes using a measurement tool to provide the measurements.

16 . The method of claim 11 , further comprising aligning the first tool and second tool to alignment marks on the MSP, respectively, prior to mapping the locations of the patterned holes.

17 . The method of claim 11 , wherein the locations of the patterned holes of the MSP are based on planned locations of the patterned holes.

18 . A system to calibrate two in-line lithographic tools, the system comprising:

a metrology-standard panel (MSP) configured to be placed subsequently into each of the two in-line lithographic tools, the MSP having an array of patterned holes, each of the patterned holes being formed to traverse a thickness of the MSP from a first side of the MSP to a second side of the MSP;

a measurement tool configured to measure an overlay error between subsequently exposed features on the MSP and an actual location of respective ones of at least a portion of the patterned holes in the array;

one or more processors; and

a memory storing instructions that, when executed by the one or processors, cause the one or more processors to perform operations comprising:

mapping locations of the array of patterned holes in the MSP to locations as determined by a first of the two in-line lithographic tools and a second of the two in-line lithographic tools, respectively, to produce a first set of locational data and a second set of locational data.

19 . The system of claim 18 , wherein a first of the two in-line lithographic tools is configured to expose a first film formed on the first side of the MSP;

a second of the two in-line lithographic tools is configured to expose a second film formed on the second side of the MSP;

the measurement tool being configured to measure the overlay error for each of the first side and the second side between the patterned holes on the MSP to the exposed portions of the film formed on the MSP by respective ones of the two in-line lithographic tools;

wherein the operations further comprise: adjusting a respective grid to match a patterned grid on the MSP to produce a respective calibrated version of each of the two in-line lithographic tools, and producing a first set of calibration data and a second set of calibration data for each of the two lithographic tools, respectively, to compensate for respective ones of the measured overlay errors.

20 . The system of claim 19 , wherein, for each of the two in-line lithographic tools, each set of the locational data is to be modeled to determine a set overlay correction data, respectively, of actual hole locations in the MSP to the locations determined by each of the first of the two in-line lithographic tools and the second of the two in-line lithographic tools.