Memory devices and systems including hybrid cache, and related methods
Memory devices are disclosed. A memory device may include hybrid cache including single-level cell (SLC) blocks of memory and non-SLC blocks of memory. The memory device may further include a memory controller configured to disable, based on workload of the hybrid cache, a portion of the hybrid cache such that writes are only directed to another, different portion of the cache. Associated methods and systems are also disclosed.
1 . A memory device, comprising:
hybrid cache including single-level cell (SLC) blocks of memory and non-SLC blocks of memory; and
a memory controller configured to disable, based on workload of the hybrid cache, a portion of the hybrid cache such that writes are only directed to another, different portion of the cache.
2 . The memory device of claim 1 , wherein the memory controller is configured to monitor a workload of the hybrid cache by counting program/erase (PE) cycles of at least one of the portion of the hybrid cache or the another, different portion of the hybrid cache.
3 . The memory device of claim 1 , wherein the memory controller is configured to disable the portion of the hybrid cache responsive to comparing program/erase (PE) cycles of the portion of the hybrid cache against a threshold triggering a switch point defined as a point at which operating cache of the memory device solely with a second, different portion of the hybrid cache ensures PE cycles of the portion remain below their maximum within a Total Bytes Written (TBW) Spec for the memory device.
4 . The memory device of claim 1 , wherein the memory controller is configured to monitor a workload of the hybrid cache relative to a Total Bytes Written (TBW) Spec for the memory device.
5 . The memory device of claim 1 , wherein the portion of the hybrid cache is configured to have a Total Bytes Written (TBW) Spec that, by itself, does not support the TBW Spec as a cache over a durable lifetime for the memory device.
6 . The memory device of claim 1 , wherein the portion is unavailable responsive to at least one of:
a workload burst of host data exceeding free space in the portion; or
the memory controller disabling the portion from being written to.
7 . The memory device of claim 1 , wherein the memory controller is configured to write the host data to the SLC blocks of memory in a SLC mode.
8 . The memory device of claim 1 , wherein the memory controller is configured to write the host data to main memory of the memory array if the portion and the another, different portion are unavailable.
9 . The memory device of claim 8 , wherein the memory controller is configured to write the host data to the main memory in an x-level cell (XLC) mode, wherein x represents an integer greater than one.
10 . The memory device of claim 1 , wherein the memory controller is configured to disable at least one of the portion or the another, different portion based on a user workload pattern of the memory device relative to a Total Bytes Written (TBW) Spec for a main memory of the memory array.
11 . A method, comprising:
writing data in one of a first portion of hybrid cache including single-level cell (SLC) blocks of a memory device or a second portion of the hybrid cache including non-SLC blocks of the memory device; and
disabling, based on an endurance associated with the hybrid cache, the first portion of the hybrid cache or the second portion of the hybrid cache such that data is only written to the other of the first portion or the second portion of the hybrid cache.
12 . The method of claim 11 , wherein disabling the first portion of the hybrid cache or the second portion of the hybrid cache is effective through an end of a Host Total Bytes Written (TBW) Spec for the memory device.
13 . The method of claim 11 , further comprising enabling one of the first portion of the hybrid cache or the second portion of the hybrid cache responsive to a reduced trend in a determined workload of the hybrid cache.
14 . The method of claim 11 , further comprising receiving the data from a host external to the memory device.
15 . The method of claim 11 , wherein disabling the first portion of the hybrid cache or the second portion of the hybrid cache comprises at least one of:
disabling the first portion responsive to comparing program/erase (PE) cycles consumed by the first portion against a maximum threshold for the first portion; and
disabling the second portion responsive to comparing PE cycles consumed by the second portion against a predetermined threshold for triggering a switch point defined as a point at which operating the hybrid cache solely with the first portion ensures PE cycles of x-level cell (XLC) blocks of the second portion remain below their maximum within a Total Bytes Written (TBW) Spec for the memory device.
16 . A system, comprising:
a memory device including hybrid cache including:
first cache including single-level cell (SLC) blocks of memory; and
second cache including non-SLC blocks of memory;
the memory device configured to disable, based on a workload of the hybrid cache, one of the first cache or the second cache from being written to.
17 . The system of claim 16 , wherein the memory device is configured to monitor the workload of the hybrid cache relative to a Total Bytes Written (TBW) Spec for the memory device.
18 . The system of claim 16 , wherein the memory device is configured to write data received from a host device in at least one of main memory of the memory device, the first cache, or the second cache.
19 . The system of claim 16 , wherein the first cache comprises static cache and the second cache comprises dynamic cache.
20 . The system of claim 16 , wherein the second cache and a main memory of the memory device share at least a portion of x-level cell (XLC) blocks of the memory device, wherein x represents an integer greater than one.