IP Library Granted Patent US 12664947
Granted Patent B2
US 12664947 · App. 19/023,006 · Granted Jun 23, 2026

Emission selection driver, emission selection gate driver including the same, and an electronic device including the emission selection gate driver

Inventors: Eseudeo Yun (Yongin-si, KR); Nackhyeon Keum (Yongin-si, KR); Kyung-Hoon Kim (Yongin-si, KR); Yongchan Kim (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
G09G3/3266G09G3/3685G09G3/3688G09G2310/0202G09G2310/0286G09G2310/08G09G2330/021
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Quick Facts
Patent No.
US 12664947
App. No.
19/023,006
Granted
Jun 23, 2026
Kind
B2
Abstract

An emission selection driver includes an emission driver configured to output an emission signal in response to a voltage of an emission control node and a voltage of an inverted emission control node and a selection driver configured to output a selection signal based on the voltage of the emission control node, the voltage of the inverted emission control node, and an enable signal.

Claims (47)

1 . An emission selection driver comprising:

an emission driver configured to output an emission signal in response to a voltage of an emission control node and a voltage of an inverted emission control node; and

a selection driver configured to output a selection signal based on the voltage of the emission control node, the voltage of the inverted emission control node, and an enable signal,

wherein the selection driver comprises:

a first selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive the enable signal, and a second electrode;

a second selection transistor comprising a gate electrode connected to the second electrode of the first selection transistor, a first electrode configured to receive the voltage of the inverted emission control node, and a second electrode connected to a selection control node;

a third selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a high gate voltage, and a second electrode connected to the selection control node;

a fourth selection transistor comprising a gate electrode connected to the selection control node, a first electrode configured to receive the high gate voltage, and a second electrode connected to a selection output node from which the selection signal is output; and

a fifth selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a low gate voltage, and a second electrode connected to the selection output node.

2 . The emission selection driver of claim 1 , wherein the enable signal is a global scan signal, and the emission signal and the selection signal are progressive scan signals.

3 . The emission selection driver of claim 1 , wherein the voltage of the emission control node has a phase opposite to the voltage of the inverted emission control node, and

wherein the emission signal has a same phase as the voltage of the emission control node.

4 . The emission selection driver of claim 1 , wherein, when a pulse of the enable signal overlaps a pulse of the emission signal, a pulse of the selection signal is output.

5 . The emission selection driver of claim 1 , wherein, when a pulse of the enable signal is output before a pulse of the emission signal and the pulse of the enable signal partially overlaps with the pulse of the emission signal, the selection signal has no pulse.

6 . The emission selection driver of claim 1 , wherein, when the enable signal maintains a first level, a pulse of the selection signal is output.

7 . The emission selection driver of claim 1 , wherein, when a pulse of the enable signal is output later than a pulse of the emission signal and the pulse of the enable signal partially overlaps with the pulse of the emission signal, a pulse of the selection signal is output.

8 . The emission selection driver of claim 1 , wherein a pulse of the selection signal has a same length and timing as a pulse of the emission signal.

9 . The emission selection driver of claim 1 , wherein the first to fifth selection transistors are P-type transistors.

10 . The emission selection driver of claim 1 , wherein the selection driver further comprises:

a selection capacitor comprising a first electrode configured to receive the high gate voltage and a second electrode connected to the selection control node.

11 . The emission selection driver of claim 1 , wherein, when the voltage of the emission control node has a first level, the voltage of the inverted emission control node has a second level, and the enable signal has the first level, the selection signal has the first level.

12 . The emission selection driver of claim 1 , wherein, when the voltage of the emission control node has a first level, the voltage of the inverted emission control node has a second level, and the enable signal has the second level, the selection signal has the first level.

13 . The emission selection driver of claim 1 , wherein, when the voltage of the emission control node has a second level and the voltage of the inverted emission control node has a first level, a voltage of the gate electrode of the second selection transistor maintains a previous state.

14 . The emission selection driver of claim 13 , wherein, when the previous state of the voltage of the gate electrode of the second selection transistor is the first level, the selection signal has the second level.

15 . The emission selection driver of claim 13 , wherein, when the previous state of the voltage of the gate electrode of the second selection transistor is the second level, a voltage of the selection control node maintains a previous state.

16 . The emission selection driver of claim 15 , wherein, when the previous state of the voltage of the selection control node is the second level, the selection signal maintains the previous state.

17 . An emission selection gate driver comprising:

an emission driver configured to output an emission signal in response to a voltage of an emission control node and a voltage of an inverted emission control node;

a selection driver configured to output a selection signal based on the voltage of the emission control node, the voltage of the inverted emission control node, and an enable signal; and

a gate driver configured to output a gate signal which is masked based on the selection signal,

wherein the emission selection driver comprises:

a first selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive the enable signal, and a second electrode;

a second selection transistor comprising a gate electrode connected to the second electrode of the first selection transistor, a first electrode configured to receive the voltage of the inverted emission control node, and a second electrode connected to a selection control node;

a third selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a high gate voltage, and a second electrode connected to the selection control node;

a fourth selection transistor comprising a gate electrode connected to the selection control node, a first electrode configured to receive the high gate voltage, and a second electrode connected to a selection output node from which the selection signal is output; and

a fifth selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a low gate voltage, and a second electrode connected to the selection output node.

18 . The emission selection gate driver of claim 17 , wherein the enable signal is a global scan signal, and the emission signal and the selection signal are progressive scan signals.

19 . An electronic device comprising a display device having an emission selection driver to drive the display device, the emission selection driver comprising:

an emission driver configured to output an emission signal in response to a voltage of an emission control node and a voltage of an inverted emission control node; and

a selection driver configured to output a selection signal based on the voltage of the emission control node, the voltage of the inverted emission control node, and an enable signal,

wherein the emission selection driver comprises:

a first selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive the enable signal, and a second electrode;

a second selection transistor comprising a gate electrode connected to the second electrode of the first selection transistor, a first electrode configured to receive the voltage of the inverted emission control node, and a second electrode connected to a selection control node;

a third selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a high gate voltage, and a second electrode connected to the selection control node;

a fourth selection transistor comprising a gate electrode connected to the selection control node, a first electrode configured to receive the high gate voltage, and a second electrode connected to a selection output node from which the selection signal is output; and

a fifth selection transistor comprising a gate electrode configured to receive the voltage of the emission control node, a first electrode configured to receive a low gate voltage, and a second electrode connected to the selection output node.

20 . The electronic device of claim 19 , wherein the electronic device is a smart phone, a cellular phone, a video phone, a smart pad, a smart watch, a tablet PC, a car navigation system, a computer monitor, a laptop, or a head mounted display (HMD) device.