Stop read go settings for low suspend latency applications
Each Stop Read Go (SRG) setting has different latency and reliability issues. An aspect of the present disclosure is related to minimizing these reliability risks while maintaining the benefit of low suspend latency when implementing SRG.
1 . A method of programming a memory device, comprising the steps of:
receiving a program command to write data to the memory device;
preparing at least one memory block that includes a plurality of memory cells arranged in a plurality of word lines;
in a plurality of program loops, programming memory cells of a selected word line to include the data;
receiving a suspend command to suspend programming of the memory cells of the selected word line;
setting a maximum number of allowed suspend operations during a program operation based on a threshold voltage downshift for a highest programmed voltage state of the plurality of memory cells;
determining a number of suspend operations that were performed during programming of the memory cells of the selected word line; and
in response to determining that the number of suspend operations performed is higher than or equal to the maximum number of allowed suspend operations during a program operation, continuing programming of the memory cells of the selected word line in a current program loop of the plurality of program loops.
2 . The method as set forth in claim 1 , further including the step of:
in response to determining that the number of suspend operations performed is less than the maximum number of allowed suspend operations during a program operation, suspending programming of the memory cells of the selected word line in the current program loop.
3 . The method as set forth in claim 1 , wherein the maximum number of allowed suspend operations is 20.
4 . The method as set forth in claim 1 , wherein the maximum number of allowed suspend operations is selected based on the threshold voltage downshift caused by performing multiple suspend operations during a programming operation of a programmed voltage state adjacent to the highest programmed voltage state.
5 . The method set forth in claim 4 , wherein the maximum number of allowed suspend operations is selected further based on a threshold voltage margin between the highest programmed voltage state and the programmed voltage state adjacent to the highest programmed voltage state.
6 . The method of set forth in claim 1 , wherein receiving the suspend command includes receiving the suspend command to initiate a Stop Read Go (SRG) operation.