Microchips for use in electron microscopes and related methods
Method for fabricating a microchip are provided which may comprise forming a dopant mask layer on a front side surface of a silicon substrate having the front side surface and an opposing back side surface; removing a portion of the dopant mask layer according to a pattern to form a first exposed silicon region in the silicon substrate and a first unexposed silicon region in the silicon substrate; doping the first exposed silicon region in the silicon substrate with a p-type dopant to form a first p-type doped silicon region in the silicon substrate; forming a silicon nitride layer on the front side surface of the silicon substrate comprising the first p-type doped silicon region and the first unexposed silicon region; and forming an opening in the silicon substrate from the opposing back side surface of the silicon substrate to provide a microchip comprising the silicon substrate having the opening, a first silicon nitride window positioned within the opening, and a support structure mounted to the first silicon nitride window, the support structure comprising the first p-type doped silicon region. The fabricated microchips and methods of using the microchips are also provided.
1 . A method for fabricating a microchip, the method comprising:
(a) forming a dopant mask layer on a front side surface of a silicon substrate having the front side surface and an opposing back side surface;
(b) removing a portion of the dopant mask layer according to a pattern to form a first exposed silicon region in the silicon substrate and a first unexposed silicon region in the silicon substrate;
(c) doping the first exposed silicon region in the silicon substrate with a p-type dopant to form a first p-type doped silicon region in the silicon substrate;
(d) forming a silicon nitride layer on the front side surface of the silicon substrate comprising the first p-type doped silicon region and the first unexposed silicon region; and
(e) forming an opening in the silicon substrate from the opposing back side surface of the silicon substrate to provide a microchip comprising the silicon substrate having the opening, a first silicon nitride window positioned within the opening, and a support structure mounted to the first silicon nitride window, the support structure comprising the first p-type doped silicon region.
2 . The method of claim 1 , wherein the pattern provides a plurality of unexposed silicon regions comprising the first unexposed silicon region and the microchip comprises a plurality of silicon nitride windows comprising the first silicon nitride window, each silicon nitride window having a position corresponding to a respective unexposed silicon region of the plurality of unexposed silicon regions.
3 . The method of claim 2 , wherein a spacing between adjacent silicon nitride windows of the plurality of silicon nitride windows is no more than 500 μm.
4 . The method of claim 1 , wherein the support structure further comprises a portion of the silicon nitride layer formed on the first p-type doped silicon region.
5 . The method of claim 1 , wherein the support structure surrounds a perimeter of the first silicon nitride window.
6 . The method of claim 2 , wherein the support structure comprises a p-type doped silicon layer comprising the first p-type doped silicon region, the support structure further comprises a portion of the silicon nitride layer formed on the p-type doped silicon layer, and further wherein, the support structure surrounds a perimeter of each silicon nitride window of the plurality of silicon nitride windows.
7 . The method of claim 6 , wherein a spacing between adjacent silicon nitride windows of the plurality of silicon nitride windows is no more than 100 μm.
8 . The method of claim 1 , wherein the silicon substrate has a hole concentration of less than 10 19 cm −3 .
9 . The method of claim 1 , wherein the silicon substrate is an undoped silicon substrate.
10 . The method of claim 1 , wherein the p-type dopant is selected from boron, aluminum, gallium, indium, and combinations thereof.
11 . The method of claim 10 , wherein the p-type dopant is boron.
12 . The method of claim 1 , wherein the first p-type doped silicon region is doped to provide a concentration of the p-type dopant of greater than 10 19 cm −3 .
13 . The method of claim 1 , further comprising, after forming the opening in the silicon substrate, step (f), thinning a region of the silicon nitride layer adjacent the first p-type doped silicon region to provide the silicon nitride window.
14 . The method of claim 13 , wherein the silicon nitride window has a thickness of no more than 10 nm.
15 . The method of claim 1 , further comprising forming an electrode layer on the silicon nitride layer, the electrode layer configured to apply an electric potential across the first silicon nitride window or an enclosure encapsulated by the first silicon nitride window.
16 . The method of claim 1 , further comprising forming a heater layer on the silicon nitride layer, the heater layer configured to provide heat to the first silicon nitride window or an enclosure encapsulated by the first silicon nitride window.