IP Library › Granted Patent US 12665169
Granted Patent B2
US 12665169 · App. 18/652,609 · Granted Jun 23, 2026

Modular high-frequency source

Inventors: Thai Cheng Chua (Cupertino, CA); Christian Amormino (San Jose, CA); Hanh Nguyen (San Jose, CA); Kallol Bera (San Jose, CA); Philip Allan Kraus (San Jose, CA)
Assignee: Applied Materials, Inc.
H01J37/32201H01J37/32311H01J2237/3321H01J2237/3323H01J2237/334H01J2237/335H03F3/19H03F3/21
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Quick Facts
Patent No.
US 12665169
App. No.
18/652,609
Granted
Jun 23, 2026
Kind
B2
Abstract

Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Claims (26)

1 . A modular high-frequency emission source, comprising:

an array of circular applicators over a plurality of wafer processing regions, the array having a plurality of zones each having a same total area, wherein a first zone has a first number of circular applicators, and a second zone has a second number of circular applicators, the second number of circular applicators different than the first number of circular applicators, wherein there are no applicators over one or more of the plurality of wafer processing regions.

2 . The modular high-frequency emission source of claim 1 , wherein the second number is zero.

3 . The modular high-frequency emission source of claim 1 , wherein the array has a total of four zones, wherein the first zone is opposite a third zone having the first number of circular applicators, wherein the second zone is opposite a fourth zone having the second number of circular applicators, wherein the second zone is between the first zone and the third zone, and wherein the fourth zone is between the third zone and the first zone.

4 . The modular high-frequency emission source of claim 3 , wherein the second number is zero.

5 . The modular high-frequency emission source of claim 1 , wherein the high-frequency is a microwave frequency.

6 . The modular high-frequency emission source of claim 1 , wherein each circular applicator is a dielectric resonator.

7 . The modular high-frequency emission source of claim 1 , wherein the high-frequency is 0.1 MHz to 300 GHz.

8 . A processing tool, comprising:

a processing chamber; and

a modular high-frequency emission source, comprising:

a plurality of oscillator modules;

a plurality of amplification modules; and

an array of circular applicators over a plurality of wafer processing regions, the array having a plurality of zones each having a same total area, wherein a first zone has a first number of circular applicators, and a second zone has a second number of circular applicators, the second number of circular applicators different than the first number of circular applicators, wherein there are no applicators over one or more of the plurality of wafer processing regions.

9 . The processing tool of claim 8 , a ratio of oscillator modules to circular applicators is 1:1.

10 . The processing tool of claim 8 , a ratio of oscillator modules to circular applicators is 1:2.

11 . The processing tool of claim 8 , a ratio of oscillator modules to circular applicators is 1:3.

12 . The processing tool of claim 8 , a ratio of oscillator modules to circular applicators is 1:4.

13 . The processing tool of claim 8 , wherein the second number is zero.

14 . The processing tool of claim 8 , wherein the array of circular applicators has a total of four zones, wherein the first zone is opposite a third zone having the first number of circular applicators, wherein the second zone is opposite a fourth zone having the second number of circular applicators, wherein the second zone is between the first zone and the third zone, and wherein the fourth zone is between the third zone and the first zone.

15 . The processing tool of claim 14 , wherein the second number is zero.

16 . The processing tool of claim 8 , wherein the high-frequency is a microwave frequency.

17 . The processing tool of claim 8 , wherein each circular applicator of the array of circular applicators is a dielectric resonator.

18 . The processing tool of claim 8 , wherein the high-frequency is 0.1 MHz to 300 GHz.

19 . The processing tool of claim 8 , wherein high-frequency electromagnetic radiation emitted from the array of circular applicators excites a plasma.

20 . The processing tool of claim 8 , wherein the oscillator modules and the amplification modules comprise solid state electronic components.