IP Library › Granted Patent US 12665171
Granted Patent B2
US 12665171 · App. 17/973,903 · Granted Jun 23, 2026

Method and system for selectively removing material at an edge of a substrate

Inventors: Yoshio Susa (Tama, JP); Koei Aida (Hachioji, JP); Ryo Miyama (Tokyo, JP); Yoshiyuki Kikuchi (Tokyo, JP)
Assignee: ASM IP Holding B.V.
H01J37/3244H10P14/6336H10P50/283H10P72/72
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Quick Facts
Patent No.
US 12665171
App. No.
17/973,903
Granted
Jun 23, 2026
Kind
B2
Abstract

Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

Claims (22)

1 . A method of selectively removing a film at the perimeter of a substrate, the method comprising:

providing a substrate processing apparatus comprising:

a susceptor within a reaction chamber;

a gas distribution device disposed above the susceptor; and

a flow control ring above the susceptor and below the gas distribution device;

providing the substrate on the susceptor, wherein a bottom surface of the substrate is below a top surface of the susceptor;

providing a process gas through the distribution device;

providing an etch gas through an etch gas channel formed within the susceptor, the etch gas channel extending from below the bottom surface of the substrate to the top surface of the susceptor and about a perimeter of the substrate that is below the top surface of the susceptor; and

forming a plasma within the reaction chamber using the etch gas, the gas distribution device and the susceptor.

2 . The method of claim 1 , wherein the gas distribution device forms an electrode.

3 . The method of claim 1 , wherein the gas distribution device and the susceptor are configured to form the plasma at the perimeter of the substrate and below the top surface of the susceptor.

4 . The method of claim 1 , wherein the etch gas does not remove the film at the center of the substrate.

5 . The method of claim 1 , wherein the susceptor comprises a susceptor stage, and wherein the etch gas channel is configured to provide the etch gas from below the bottom surface of the substrate toward a top surface of the susceptor and about the perimeter of the substrate stage.

6 . The method of claim 1 , wherein the plasma is formed between an inner surface of the flow control ring and the perimeter of the susceptor that is below the flow control ring.

7 . The method of claim 1 , further comprising modifying a flow rate of the etch gas.

8 . The method of claim 1 , wherein the etch gas comprises at least one of H 2 , O 2 , CO 2 , NO 2 , NH 3 , He, Ar, N 2 , and CO.

9 . The method of claim 1 , wherein the etch gas comprises H 2 , and one of Ar and He.

10 . The method of claim 1 , wherein the susceptor comprises an electrostatic chuck.

11 . The method of claim 1 , wherein the process gas comprises a deposition gas, the method further comprising providing the deposition gas through the gas distribution device while the etch gas is provided.

12 . The method of claim 1 , wherein the process gas comprises a deposition gas, the method further comprising providing the deposition gas through the gas distribution device before the etch gas is provided.

13 . The method of claim 8 , further comprising providing an inert gas through the gas distribution device while the etch gas is provided.

14 . The method of claim 1 , wherein the step of forming the plasma comprises providing power from a power source coupled to the gas distribution device.