IP Library Granted Patent US 12665385
Granted Patent B2
US 12665385 · App. 17/712,932 · Granted Jun 23, 2026

Optical integrated circuit sensor package using a stacked configuration for the sensor die and the emitter die

Inventor: Loic Pierre Louis Renard (Singapore, SG)
Assignee: STMicroelectronics PTE LTD
H01S5/0262G02F1/0136H01S5/0071H01S5/02218H01S5/02253H01S5/02255H01S5/0239H01S5/18302
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Quick Facts
Patent No.
US 12665385
App. No.
17/712,932
Granted
Jun 23, 2026
Kind
B2
Abstract

An optical sensor package includes an emitter die mounted to an upper surface of a package substrate. A sensor die is mounted to the upper surface of the package substrate using a film on die (FOD) adhesive layer that extends over the upper surface and encapsulates the emitter die. The sensor die is positioned in a stacked relationship with respect to the emitter die such that a light channel region which extends through the sensor die is optically aligned with the emitter die. Light emitted by the emitter die passes through the light channel region of the sensor die. The emitter die and the sensor die are each electrically coupled to the package substrate.

Claims (63)

1 . An optical sensor package, comprising:

a package substrate;

an emitter die having a back surface mounted to an upper surface of the package substrate;

an adhesive layer extending over the upper surface and encapsulating the emitter die on its side and front surfaces, wherein the adhesive layer includes a portion overlying the emitter die;

a sensor die mounted to an upper surface of the adhesive layer in a stacked relationship where the sensor die is positioned to cover over the portion of the adhesive layer overlying the emitter die;

said sensor die including a light channel region that extends through a thickness of the sensor die and which is optically aligned with the emitter die such that light emitted by the emitter die passes through the light channel region of the sensor die; and

electrical connections between the package substrate and each of the emitter die and the sensor die.

2 . The optical sensor package of claim 1 , wherein the package substrate comprises a leadframe.

3 . The optical sensor package of claim 1 , wherein the emitter die is a vertical cavity surface emitting laser (VCSEL) diode and wherein the sensor die includes at least one photosensitive region.

4 . The optical sensor package of claim 3 , wherein the at least one photosensitive region comprises one or more single photon avalanche diode (SPAD) devices.

5 . The optical sensor package of claim 1 , wherein the sensor die includes, for the light channel region, an integrated diffractive optical element configured to diffract said light passing through the light channel.

6 . The optical sensor package of claim 5 , wherein the integrated diffractive optical element is a passive element formed by a pattern of transparent structures having different indices of refraction.

7 . The optical sensor package of claim 5 , wherein the integrated diffractive optical element is a passive element formed by a plurality of metal structures formed by and in one or more metallization layers of the sensor die.

8 . The optical sensor package of claim 5 , wherein the integrated diffractive optical element is an active element.

9 . The optical sensor package of claim 8 , wherein the active element is selected from the group consisting of: a plasmonic device, and a liquid crystal on silicon (LCOS) device.

10 . The optical sensor package of claim 8 , wherein the active element has an operating feature selected from the group consisting of: a selectively configurable diffractive effect, a selectively configurable shutter, a selectively controllable diffraction pattern, a selectively controllable polarization filter, and a selectively controllable lens.

11 . The optical sensor package of claim 1 , further including a cap including a peripheral wall and a front wall, said cap mounted to the package substrate, and wherein the front wall includes a first opening optically aligned with the light channel region of the sensor die and optically aligned with the emitter die.

12 . The optical sensor package of claim 11 , wherein the front wall of the cap further includes a second opening optically aligned with a photosensitive region of the sensor die.

13 . The optical sensor package of claim 1 , wherein the adhesive layer is a film on die (FOD) structure.

14 . An optical sensor package, comprising:

a package substrate;

an emitter die mounted to an upper surface of the package substrate;

an adhesive layer extending over the upper surface and encapsulating the emitter die;

a sensor die mounted to an upper surface of the adhesive layer in a stacked relationship where the sensor die is positioned to cover over the emitter die;

said sensor die including a light channel region that extends through a thickness of the sensor die and which is optically aligned with the emitter die such that light emitted by the emitter die passes through the light channel region of the sensor die; and

electrical connections between the package substrate and each of the emitter die and the sensor die; and

wherein the sensor die includes a semiconductor substrate and wherein the light channel region is at least partially delimited by a region of the semiconductor substrate having a different native doping concentration level than another region within which active integrated circuits are fabricated.

15 . An optical sensor package, comprising:

a package substrate;

an emitter die mounted to an upper surface of the package substrate;

an adhesive layer extending over the upper surface and encapsulating the emitter die;

a sensor die mounted to an upper surface of the adhesive layer in a stacked relationship where the sensor die is positioned to cover over the emitter die;

said sensor die including a light channel region that extends through a thickness of the sensor die and which is optically aligned with the emitter die such that light emitted by the emitter die passes through the light channel region of the sensor die; and

electrical connections between the package substrate and each of the emitter die and the sensor die;

wherein said sensor die comprises:

a semiconductor substrate; and

an interconnect layer extending over the semiconductor substrate; and

wherein the light channel region extends through a first portion of the semiconductor substrate and a first portion of the interconnect layer from a back side of the sensor die to a front side of the sensor die.

16 . The optical sensor package of claim 15 , wherein said semiconductor substrate further includes a second portion in which photosensitive circuits are formed, and wherein said first portion and said second portion of the semiconductor substrate have different native doping concentration levels.

17 . The optical sensor package of claim 16 , wherein said interconnect layer includes a second portion in which electrical interconnect lines and vias are formed, and wherein further comprising an integrated diffractive optical element within the first portion of the interconnect layer.

18 . The optical sensor package of claim 17 , wherein the integrated diffractive optical element is a passive element selected from the group consisting of: a pattern of transparent structures having different indices of refraction and a plurality of metal structures forming an optical grating.

19 . The optical sensor package of claim 17 , wherein the integrated diffractive optical element is an active element selected from the group consisting of: a plasmonic device and a liquid crystal on silicon (LCOS) device.

20 . An apparatus, comprising:

a substrate;

a first integrated circuit die mounted to an upper surface of the substrate;

a film on die (FOD) structure providing a die attach film layer extending over the upper surface and completely encapsulating the first integrated circuit die;

a second integrated circuit die mounted to an upper surface of the FOD structure in a stacked relationship where the second integrated circuit die is positioned to cover over the first integrated circuit die; and

electrical connections between the substrate and each of the first and second integrated circuit dies.

21 . The apparatus of claim 20 , wherein said first integrated circuit die includes a light emitter configured to emit a beam of light that passes through a light channel region that extends through a thickness of the second integrated circuit die, and wherein the second integrated circuit die includes a light sensor configured to sense the emitter beam of light.

22 . The apparatus of claim 21 , wherein the second integrated circuit die includes, for the light channel region, an integrated diffractive optical element configured to diffract said beam of light passing through the light channel region.

23 . The apparatus of claim 20 , wherein the first integrated circuit die includes a light emission region and wherein the FOD structure covers the light emission region.

24 . An apparatus, comprising:

a substrate;

a first integrated circuit die mounted to an upper surface of the substrate;

an adhesive film layer extending over the upper surface and encapsulating the first integrated circuit die;

a second integrated circuit die mounted to an upper surface of the adhesive film layer in a stacked relationship where the second integrated circuit die is positioned to cover over the first integrated circuit die; and

electrical connections between the substrate and each of the first and second integrated circuit dies;

wherein said first integrated circuit die includes a light emitter configured to emit a beam of light that passes through a light channel region that extends through a thickness of the second integrated circuit die, and wherein the second integrated circuit die includes a light sensor configured to sense the emitter beam of light; and

wherein said second integrated circuit die comprises:

a semiconductor substrate; and

an interconnect layer extending over the semiconductor substrate; and

wherein the light channel region extends through a first portion of the semiconductor substrate and a first portion of the interconnect layer from a back side of the second integrated circuit die to a front side of the second integrated circuit die.

25 . The apparatus of claim 24 , wherein the second integrated circuit die includes, for the light channel region, an integrated diffractive optical element configured to diffract said beam of light passing through the light channel region.