Integrated circuit comprising a hotspot detection circuit
An integrated circuit comprising: a III-nitride high-electron-mobility transistor (HEMT) comprising a source terminal, a gate terminal, and a drain terminal; a hotspot detection circuit comprising a temperature sensor, the temperature sensor being configured to sense a localized temperature of the III-nitride HEMT; and a protection circuit; wherein the hotspot detection circuit is configured, upon sensing by the temperature sensor of an increase in the localized temperature of the III-nitride HEMT, to transmit a hotspot detection signal to the protection circuit; and wherein the protection circuit is configured, upon receipt of the hotspot detection signal, to cause a current between the source terminal and the drain terminal to be reduced.
1 . An integrated circuit comprising:
a III-nitride high-electron-mobility transistor (HEMT) comprising a source terminal, a gate terminal, a drain terminal, and a two-dimensional carrier gas layer;
a hotspot detection circuit comprising a temperature sensor, the temperature sensor being configured to sense a localized temperature of the III-nitride HEMT, wherein the temperature sensor is configured to detect the localized temperature in the two-dimensional carrier gas layer; and
a protection circuit;
wherein the hotspot detection circuit is configured, upon sensing by the temperature sensor of an increase in the localized temperature of the III-nitride HEMT, to transmit a hotspot detection signal to the protection circuit; and
wherein the protection circuit is configured, upon receipt of the hotspot detection signal, to cause a current between the source terminal and the drain terminal to be reduced.
2 . The integrated circuit according to claim 1 , wherein the hotspot detection circuit is monolithically integrated with the III-nitride HEMT.
3 . The integrated circuit according to claim 1 , wherein the protection circuit is monolithically integrated with the III-nitride HEMT.
4 . The integrated circuit according to claim 1 , wherein the temperature sensor is configured to detect the localized temperature in a location between the gate terminal and the drain terminal.
5 . The integrated circuit according to claim 1 , wherein the temperature sensor is located within a distance of less than 5 μm from the gate terminal.
6 . The integrated circuit according to claim 1 , wherein the hotspot detection circuit is configured to detect a short-circuit.
7 . The integrated circuit according to claim 1 , wherein the temperature sensor comprises a resistive temperature detector.
8 . The integrated circuit according to claim 1 , wherein the temperature sensor comprises a two-dimensional carrier gas resistor layer.
9 . The integrated circuit according to claim 1 , wherein the temperature sensor comprises one or more of:
a HEMT;
a diode;
a p-n diode; and/or
a Schottky diode.
10 . The integrated circuit according to claim 1 , comprising a second temperature sensor, the second temperature sensor being configured to sense a reference temperature, and wherein the hotspot detection circuit is configured to transmit the hotspot detection signal based on a difference between the localized temperature and the reference temperature.
11 . The integrated circuit according to claim 10 , wherein the temperature sensor and the second temperature sensor are arranged in a bridge structure.
12 . The integrated circuit according claim 10 , wherein the hotspot detection comprises a comparator configured to receive a first temperature signal from the temperature sensor, and a second temperature signal from the second temperature sensor, and wherein the hotspot detection circuit is configured to transmit the hotspot detection signal based on an output of the comparator.
13 . The integrated circuit according to claim 1 , comprising a capacitor arranged in parallel or in series with the temperature sensor.
14 . The integrated circuit according to claim 1 , wherein the protection circuit comprises a pull-down transistor connected between the gate terminal and the source terminal; and
wherein the pull-down transistor is configured, upon receipt of the hotspot detection signal by the protection circuit, to turn-on.
15 . The integrated circuit according to claim 1 , wherein the protection circuit comprises an auxiliary gate interface circuit, and wherein the gate terminal is operatively connected to a control terminal via the auxiliary gate interface circuit;
wherein the auxiliary gate interface circuit is configurable to adjust a voltage applied to the control terminal to be operatively compatible with the gate terminal.
16 . The integrated circuit according to claim 15 , wherein the auxiliary gate interface circuit is configured to adjust the voltage applied to the control terminal upon receipt by the protection circuit of the hotspot detection signal.
17 . The integrated circuit according to claim 15 , wherein the auxiliary gate interface circuit comprises an auxiliary gate HEMT and a voltage limiter.
18 . The integrated circuit according to claim 1 , wherein the hotspot detection circuit further comprises a sense HEMT, the sense HEMT having a smaller active area and/or gate width relative to the III-nitride HEMT.