Protection structure for an enhancement-mode FET of a circuit and corresponding method
The present invention relates to a circuit comprising a self-conducting transistor referred to as power transistor, a further transistor referred to as control transistor, a further transistor referred to as first protection transistor, and a string referred to as a Zener string, which comprises at least one Zener diode, wherein the power transistor is coupled between a first terminal of the circuit and a first node of the circuit, wherein the control transistor is coupled between the first node and a second terminal of the circuit, wherein a gate terminal of the control transistor is coupled to a third terminal of the circuit, wherein the first protection transistor is coupled between the first node and the second terminal, and wherein the Zener string is coupled between the first terminal and a gate terminal of the first protection transistor.
1 . A circuit comprising:
a self-conducting transistor referred to as power transistor,
a further transistor referred to as control transistor,
a second further transistor referred to as first protection transistor, and
a string referred to as a Zener string, which comprises at least one Zener diode,
wherein the power transistor is coupled between a first terminal of the circuit and a first node of the circuit,
wherein the control transistor is coupled between the first node and a second terminal of the circuit,
wherein a gate terminal of the control transistor is coupled to a third terminal of the circuit,
wherein the first protection transistor is coupled between the first node and the second terminal, and
wherein the Zener string is coupled between the first terminal and a gate terminal of the first protection transistor.
2 . The circuit according claim 1 , wherein the power transistor is a gallium nitride transistor, a silicon carbide transistor or another compound semiconductor transistor.
3 . The circuit according to claim 1 , wherein the control transistor and the first protection transistor are monolithic.
4 . The circuit according to claim 1 , wherein the control transistor, the first protection transistor and the at least one Zener diode are monolithic.
5 . The circuit according to claim 1 , wherein the drain terminal of the power transistor is coupled to the first terminal, and wherein the source terminal of the power transistor is coupled to the first node.
6 . The circuit according to claim 1 , wherein the gate terminal of the power transistor is coupled to the second terminal.
7 . The circuit according to claim 1 , wherein the drain terminal of the control transistor is coupled to the first node, and wherein a source terminal of the control transistor is coupled to the second terminal.
8 . The circuit according to claim 1 , wherein at least one of the control transistor and the first protection transistor is a self-blocking transistor, in particular a silicon, Si, self-blocking transistor.
9 . The circuit according to claim 1 , wherein the drain terminal of the first protection transistor is coupled to the first node, and wherein the source terminal of the first protection transistor is coupled to the second terminal.
10 . The circuit according to claim 1 , wherein the source terminal of the first protection transistor is coupled to the second terminal via at least a first electrical impedance.
11 . The circuit according to claim 1 , wherein the gate terminal of the first protection transistor is coupled to the second terminal at least via a second electrical impedance.
12 . The circuit according to claim 1 , wherein the circuit comprises a third further transistor referred to as second protection transistor, wherein the second protection transistor is coupled between the first node and the second terminal, and wherein the gate terminal of the second protection transistor is coupled to the source terminal of the first protection transistor.
13 . The circuit according to claim 1 , wherein the drain terminal of the second protection transistor is coupled to the first node, and wherein the source terminal of the second protection transistor is coupled to the second terminal.
14 . The circuit according to claim 1 , wherein the second protection transistor is a self-blocking transistor, in particular a self-blocking silicon, Si, transistor.
15 . The circuit of claim 1 , wherein the circuit comprises a third further transistor referred to as second protection transistor, wherein the second protection transistor is coupled between the first node and the second terminal, and wherein the gate terminal of the second protection transistor is coupled to the source terminal of the first protection transistor, wherein the drain terminal of the second protection transistor is coupled to the first node, and wherein the source terminal of the second protection transistor is coupled to the second terminal.
16 . The circuit of claim 1 , wherein the circuit comprises a third further transistor referred to as second protection transistor, wherein the second protection transistor is coupled between the first node and the second terminal, and wherein the gate terminal of the second protection transistor is coupled to the source terminal of the first protection transistor, wherein the second protection transistor is a self-blocking transistor, in particular a self-blocking silicon, Si, transistor, wherein the drain terminal of the second protection transistor is coupled to the first node, and wherein the source terminal of the second protection transistor is coupled to the second terminal, wherein the second protection transistor is a self-blocking transistor, in particular a self-blocking silicon, Si, transistor.
17 . The circuit of claim 1 , wherein the power transistor is a gallium nitride transistor, a silicon carbide transistor or another compound semiconductor transistor, wherein the drain terminal of the power transistor is coupled to the first terminal, and wherein the source terminal of the power transistor is coupled to the first node, wherein the gate terminal of the power transistor is coupled to the second terminal, wherein the drain terminal of the control transistor is coupled to the first node, and wherein a source terminal of the control transistor is coupled to the second terminal, wherein at least one of the control transistor and the first protection transistor is a self-blocking transistor, in particular a silicon, Si, self-blocking transistor, wherein the drain terminal of the first protection transistor is coupled to the first node, and wherein the source terminal of the first protection transistor is coupled to the second terminal.
18 . A method for a circuit comprising a self-conducting power transistor, a further transistor referred to as control transistor, a second further transistor referred to as first protection transistor, and a string referred to as Zener string comprising at least one Zener diode, wherein the power transistor is a gallium nitride transistor or a silicon carbide transistor, wherein the power transistor is coupled between a first terminal of the circuit and a first node of the circuit, wherein the control transistor is coupled between the first node and a second terminal of the circuit, wherein a gate terminal of the control transistor is coupled to a third terminal of the circuit, wherein the first protection transistor is coupled between the first node and the second terminal, and wherein the Zener string is coupled between the first terminal and a gate terminal of the first protection transistor, and wherein the method comprises the steps of:
a) driving the gate terminal of the control transistor via the third terminal so that the control transistor becomes conducting and sets the circuit in a state referred to as on state,
b) driving the gate terminal of the control transistor via the third terminal so that the control transistor becomes blocking and sets the circuit in a state referred to as off state, and
c) driving the gate terminal of the protection transistor via the Zener string, if a voltage across the Zener string exceeds a reverse voltage predefined by the at least one Zener diode, so that the protection transistor becomes conducting and sets and/or maintains the circuit in a state referred to as a protection state.