Method for manufacturing high-density three-dimensional programmable memory

1 . A method for manufacturing a high-density three-dimensional programmable memory, comprising:

step 1: forming a base structure, wherein a predetermined number of conductive medium layers and a predetermined number of insulating medium layers are disposed in such a manner that the conductive medium layers and the insulating medium layers are alternately stacked on each other to form the base structure, wherein an underlying circuit and the base structure are stacked in sequence on a substrate;

step 2: grooving the base structure, wherein the base structure is grooved to form a curved division groove penetrating from a top layer to a bottom layer of the base structure, so that the division groove divides the base structure into two interdigitated structures that are staggered and separated from each other;

step 3: depositing a storage medium layer required by a preset memory structure layer by layer on an inner wall of the division groove;

step 4: filling a core medium in the division groove to form a core medium layer; wherein the core medium is a semiconductor or a conductor;

step 5: etching, through a mask etching process, to form deep holes along the division groove filled with the core medium, wherein the deep holes truncate the core medium in the division groove, to form a predetermined number of core medium blocks that are distributed along a long-side direction of the division groove and that are independent of each other, and each core medium block is connected to the two interdigitated structures through the storage medium layer; and

step 6: filling only an insulating medium in the deep holes formed by etching in step 5;

wherein the method further comprises a step of penetrating through a part that is formed only on the underlying circuit and not on opposite side walls of the inner wall during the depositing of the storage medium layer on the inner wall of the division groove after performing step 3 or after performing step 6.

2 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 , wherein in step 3, the preset memory structure is one of the following structures:

a PN junction semiconductor memory structure, a Schottky semiconductor memory structure, a resistance change memory structure, a magnetic phase change memory structure, a phase change memory structure, and a ferroelectric memory structure.

3 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a PN junction semiconductor memory structure, comprising a P-type conductive region, an N-type conductive region, and an insulating medium region disposed therebetween;

wherein the conductive medium layer is a P-type semiconductor, and the core medium layer is an N-type semiconductor; or

the conductive medium layer is an N-type semiconductor, and the core medium layer is a P-type semiconductor; and

wherein step 3 comprises:

step 3.1: depositing an insulating layer in the division groove as the storage medium layer.

4 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a Schottky diode memory structure, comprising a semiconductor conductive region, a metal conductive region, and an insulating medium region disposed therebetween;

wherein the conductive medium layer is a semiconductor required for forming a Schottky diode structure, and the core medium layer is metal required for forming the Schottky diode structure; or

the conductive medium layer is metal required for forming the Schottky diode structure, and the core medium layer is a semiconductor required for forming the Schottky diode structure; and

wherein step 3 comprises:

step 3.1: depositing an insulating layer in the division groove as the storage medium layer.

5 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a memory-medium memory structure, and the memory-medium memory is any one of a resistance change memory structure, a magnetic phase change memory structure, a phase change memory structure, and a ferroelectric memory structure;

wherein materials of the conductive medium layer and the core medium layer are both metal or polycrystalline silicon; and

wherein step 3 comprises:

step 3.1: depositing a memory medium layer in the division groove as the storage medium layer.

6 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a PN junction semiconductor memory structure, comprising a P-type conductive region, an N-type conductive region, and an insulating medium region disposed therebetween;

wherein the conductive medium layer is a P+-type semiconductor, and the core medium layer is an N+-type semiconductor or conductor; and the storage medium layer comprises a first medium layer and a second medium layer;

wherein step 3 comprises:

step 3.1: depositing an insulating layer in the division groove, as the first medium layer; and

step 3.2: depositing a lightly-doped N-type semiconductor layer on an inner wall of the insulating layer, as the second medium layer; and

wherein step 4 comprises filling the core medium in a cavity of the division groove provided with the first medium layer and the second medium layer.

7 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a PN junction semiconductor memory structure, comprising a P-type conductive region, an N-type conductive region, and an insulating medium region disposed therebetween;

wherein the conductive medium layer is an N+-type semiconductor or conductor, and the core medium layer is a P+-type semiconductor; and the storage medium layer comprises a first medium layer and a second medium layer;

wherein step 3 comprises:

step 3.1: depositing a lightly-doped N-type semiconductor layer in the division groove, as the first medium layer; and

step 3.2: depositing an insulating layer on an inner wall of the lightly-doped N-type semiconductor layer, as the second medium layer; and

wherein step 4 comprises filling the core medium in a cavity of the division groove provided with the first medium layer and the second medium layer.

8 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 ,

wherein the preset memory structure is a Schottky semiconductor memory structure, comprising a metal conductive region, a semiconductor conductive region, and an insulating medium region disposed therebetween; and the storage medium layer comprises a first medium layer and a second medium layer;

wherein step 3 comprises:

step 3.1: depositing an insulating layer in the division groove, as the first medium layer; and

step 3.2: depositing a semiconductor layer on an inner wall of the insulating layer, as the second medium layer;

wherein step 4 comprises filling the core medium in a cavity of the division groove provided with the first medium layer and the second medium layer; and

wherein the conductive medium layer is metal required for a Schottky diode, the semiconductor layer is a semiconductor required for a Schottky diode, and the core medium layer is a conductor.

9 . The method for manufacturing the high-density three-dimensional programmable memory according to claim 1 , wherein the step of penetrating through the part that is formed only on the underlying circuit and not on opposite side walls of the inner wall during the depositing of the storage medium layer on the inner wall after performing step 3 or after performing step 6 comprises:

after performing step 3, etching the part until the part only formed on the underlying circuit is penetrated through; or

after performing step 6, applying power to the filled core medium and the underlying circuit, to break down the part.